|
US2011310656A1
|
|
Memory cell with resistance-switching layers including breakdown layer
|
|
US2011204316A1
|
|
Structure and fabrication method for resistance-change memory cell in 3-D memory
|
|
US2011229990A1
|
|
Forming and training processes for resistance-change memory cell
|
|
US2011254126A1
|
|
Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
|
|
US2011204474A1
|
|
Memory cell with silicon-containing carbon switching layer and methods for forming the same
|
|
US2009256258A1
|
|
Semiconductor chip with integrated via
|
|
US2009212438A1
|
|
Integrated circuit device comprising conductive vias and method of making the same
|
|
US2009026524A1
|
|
Stacked Circuits
|
|
US2008102278A1
|
|
Carbon filament memory and method for fabrication
|
|
US2007176255A1
|
|
Integrated circuit arrangement
|
