CN112086360A
|
|
SiC planar MOSFET and self-alignment process thereof
|
CN112103188A
|
|
Gradual change super junction terminal and manufacturing method thereof
|
CN112103181A
|
|
Novel high-reliability IGBT and manufacturing method thereof
|
CN112086361A
|
|
SiC trench MOSFET and manufacturing process thereof
|
CN112086367A
|
|
TO-220 packaged MOSFET with Clip structure and manufacturing method thereof
|
CN112180239A
|
|
Method for detecting reliability problem of input end and output end of integrated circuit
|
CN112068632A
|
|
High-precision voltage reference circuit
|
CN112162584A
|
|
Current bias circuit with adjustable and compensable current value
|
CN112117327A
|
|
IGBT device and manufacturing process thereof
|
CN111986994A
|
|
IGBT manufacturing method and IGBT semiconductor structure
|
CN111952174A
|
|
IGBT with thickened oxide layer at bottom of trench and manufacturing method thereof
|
CN112185816A
|
|
High-energy-efficiency shielded gate trench MOSFET and manufacturing method thereof
|
CN112164652A
|
|
Diagonal through-flow square cell IGBT and manufacturing method thereof
|
CN111952180A
|
|
UMOS with balanced current density and manufacturing method thereof
|
CN111668311A
|
|
MOSFET chip layout structure
|
CN111668310A
|
|
Deep P-well trench MOSFET and manufacturing method thereof
|
CN111244177A
|
|
Structure and manufacturing process of groove type MOS device and electronic device
|