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JIANGSU DONGHAI SEMICONDUCTOR TECH CO LTD

Overview
  • Total Patents
    17
  • GoodIP Patent Rank
    96,494
About

JIANGSU DONGHAI SEMICONDUCTOR TECH CO LTD has a total of 17 patent applications. Its first patent ever was published in 2019. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, control and measurement are HUBEI TECH SEMICONDUCTORS CO LTD, UEHLING TRENT S and YESPOWERTECHNIX CO LTD.

Patent filings in countries

World map showing JIANGSU DONGHAI SEMICONDUCTOR TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 17

Patent filings per year

Chart showing JIANGSU DONGHAI SEMICONDUCTOR TECH CO LTDs patent filings per year from 1900 to 2020

Focus industries

Top inventors

# Name Total Patents
#1 Huang Chuanwei 14
#2 Tan Yimin 9
#3 Xia Huazhong 8
#4 Lyu Wensheng 7
#5 Zhu Jianzhou 7
#6 Xia Huaqiu 6
#7 Li Jian 6
#8 Zhao Jiakuan 4
#9 Ju Shuirong 3
#10 Chen Baiyang 1

Latest patents

Publication Filing date Title
CN112086360A SiC planar MOSFET and self-alignment process thereof
CN112103188A Gradual change super junction terminal and manufacturing method thereof
CN112103181A Novel high-reliability IGBT and manufacturing method thereof
CN112086361A SiC trench MOSFET and manufacturing process thereof
CN112086367A TO-220 packaged MOSFET with Clip structure and manufacturing method thereof
CN112180239A Method for detecting reliability problem of input end and output end of integrated circuit
CN112068632A High-precision voltage reference circuit
CN112162584A Current bias circuit with adjustable and compensable current value
CN112117327A IGBT device and manufacturing process thereof
CN111986994A IGBT manufacturing method and IGBT semiconductor structure
CN111952174A IGBT with thickened oxide layer at bottom of trench and manufacturing method thereof
CN112185816A High-energy-efficiency shielded gate trench MOSFET and manufacturing method thereof
CN112164652A Diagonal through-flow square cell IGBT and manufacturing method thereof
CN111952180A UMOS with balanced current density and manufacturing method thereof
CN111668311A MOSFET chip layout structure
CN111668310A Deep P-well trench MOSFET and manufacturing method thereof
CN111244177A Structure and manufacturing process of groove type MOS device and electronic device