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IMS NANOFABRICATION GMBH

Overview
  • Total Patents
    64
  • GoodIP Patent Rank
    46,446
  • Filing trend
    ⇧ 500.0%
About

IMS NANOFABRICATION GMBH has a total of 64 patent applications. It increased the IP activity by 500.0%. Its first patent ever was published in 2003. It filed its patents most often in United States, EPO (European Patent Office) and Japan. Its main competitors in its focus markets electrical machinery and energy, micro-structure and nano-technology and optics are IMS NANOFABRICATION AG, KRUIT PIETER and PARAM CORP.

Patent filings per year

Chart showing IMS NANOFABRICATION GMBHs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Platzgummer Elmar 47
#2 Stengl Gerhard 19
#3 Buschbeck Herbert 17
#4 Spengler Christoph 17
#5 Lammer Gertraud 14
#6 Naetar Wolf 12
#7 Nowak Robert 11
#8 Chalupka Alfred 10
#9 Christoph Spengler 6
#10 Loeschner Hans 6

Latest patents

Publication Filing date Title
US2020348597A1 Adapting the Duration of Exposure Slots in Multi-Beam Writers
KR20200128363A Adapting the duration of exposure slots in multi­beam writers
EP3518268A1 Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US2019237288A1 Charged-particle source and method for cleaning a charged-particle source using back-sputtering
EP3518272A1 Non-linear dose- and blur-dependent edge placement correction
US2019214226A1 Non-linear dose- and blur-dependent edge placement correction
US2019088448A1 Method for Irradiating a Target Using Restricted Placement Grids
EP3460825A1 Method for irradiating a target using restricted placement grids
JP2019075543A Dose-related feature reshaping in exposure pattern to be exposed in multibeam writing apparatus
US2019066976A1 Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US2018218879A1 Advanced dose-level quantization of multibeam-writers
EP3355337A1 Advanced dose-level quantization for multibeam-writers
US2017357153A1 Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
EP3258479A1 Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US2016336147A1 Multi-beam writing using inclined exposure stripes
EP3093869A1 Multi-beam writing using inclined exposure stripes
EP2950325A1 Compensation of dose inhomogeneity using overlapping exposure spots
EP2913838A1 Compensation of defective beamlets in a charged-particle multi-beam exposure tool
WO2006084298A1 Charged-particle exposure apparatus with electrostatic zone plate
GB0508660D0 Particle-beam exposure apparatus