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HEBEI POSHING ELECTRONICS TECH CO LTD

Overview
  • Total Patents
    22
  • GoodIP Patent Rank
    72,925
  • Filing trend
    ⇩ 71.0%
About

HEBEI POSHING ELECTRONICS TECH CO LTD has a total of 22 patent applications. It decreased the IP activity by 71.0%. Its first patent ever was published in 2015. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, surface technology and coating and measurement are NAGAOKA TATSUJI, TIVRA CORP and FUJIWARA SHINSUKE.

Patent filings in countries

World map showing HEBEI POSHING ELECTRONICS TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 22

Patent filings per year

Chart showing HEBEI POSHING ELECTRONICS TECH CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Zhao Lixia 16
#2 Chen Bingke 14
#3 Wu Huiwang 13
#4 Xue Hongwei 10
#5 Yuan Zhaogeng 8
#6 Ren Licui 6
#7 Zhang Zhiqin 5
#8 Hou Zhiyi 3
#9 Li Shenghua 3
#10 Zhang Xugang 3

Latest patents

Publication Filing date Title
CN111536911A Multi-epitaxial furnace deviation monitoring method
CN111477566A Device and method for improving slip sheet of epitaxial wafer
CN110957246A Method for measuring temperature of reaction chamber of epitaxial equipment
CN110797256A Method for testing resistivity of silicon carbide buffer layer
CN110284188A The method that PVT method prepares silicon carbide crucible and adjusts crucible temperature field
CN110286310A Test device based on semiconductor wafer surface
CN110455725A A kind of evaluation method of high-pure SiC power item matter
CN110331438A A method of inhibit carbon package volume defect in conductive silicon carbide crystal growth to generate
CN110456152A A kind of test method, system and the terminal device of epilayer resistance rate
CN110158151A For the crucible cover of silicon carbide monocrystal growth, crucible and the method for crystal growth
CN110205682A A kind of method of attaching of silicon carbide seed
CN109440191A A kind of carborundum crystals the high temperature anneal method
CN108588836A Growing silicon carbice crystals thermal field rotating device
CN107256837A The measuring method of the electrical resistivity of substrate is sealed based on the super back of the body
CN106910676A The growing method of intrinsic layer on P+ substrates
CN106906455A The trapezoidal pedestal of silicon epitaxial reaction cavity
CN106952965A Silicon epitaxial wafer and preparation method thereof
CN106876248A 8 inches of thin-film epitaxy pieces, uniformity control method and applications
CN106876246A The method for improving resistivity evenness in epitaxial wafer piece
CN106803480A The application of the method and epitaxial wafer of P+ Growns N silicon epitaxial wafers under normal pressure