FUJIWARA SHINSUKE has a total of 13 patent applications. Its first patent ever was published in 2000. It filed its patents most often in United States and China. Its main competitors in its focus markets surface technology and coating and semiconductors are TIVRA CORP, SHANGHAI ZING SEMICONDUCTOR CORP and BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTD.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 12 | |
#2 | China | 1 |
# | Industry | |
---|---|---|
#1 | Surface technology and coating | |
#2 | Semiconductors |
# | Technology | |
---|---|---|
#1 | Single-crystal-growth | |
#2 | Semiconductor devices |
# | Name | Total Patents |
---|---|---|
#1 | Fujiwara Shinsuke | 12 |
#2 | Uematsu Koji | 6 |
#3 | Nakahata Seiji | 4 |
#4 | Yamamoto Yoshiyuki | 2 |
#5 | Satoh Issei | 2 |
#6 | Harada Shin | 2 |
#7 | Osada Hideki | 2 |
#8 | Fumiaki Nakaji | 1 |
#9 | Inoue Hiroki | 1 |
#10 | Nishiguchi Taro | 1 |
Publication | Filing date | Title |
---|---|---|
US2012118222A1 | METHOD OF MANUFACTURING GaN-BASED FILM | |
US2012122301A1 | Method of manufacturing GaN-based film | |
US2011108852A1 | GaN substrate and light-emitting device | |
US2011057197A1 | GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof |