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GLOBALWAFERS JAPAN CO LTD

Overview
  • Total Patents
    165
  • GoodIP Patent Rank
    11,092
  • Filing trend
    ⇩ 11.0%
About

GLOBALWAFERS JAPAN CO LTD has a total of 165 patent applications. It decreased the IP activity by 11.0%. Its first patent ever was published in 2007. It filed its patents most often in Japan, Taiwan and China. Its main competitors in its focus markets semiconductors, surface technology and coating and measurement are HEBEI POSHING ELECTRONICS TECH CO LTD, SUMCO CORP and FUJIWARA SHINSUKE.

Patent filings per year

Chart showing GLOBALWAFERS JAPAN CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Araki Koji 50
#2 Sudo Haruo 40
#3 Aoki Tatsuhiko 32
#4 Maeda Susumu 31
#5 Kashima Kazuhiko 27
#6 Nagai Yuta 19
#7 Nakagawa Satoko 19
#8 Senda Takeshi 16
#9 Araki Nobue 16
#10 Nakamura Kozo 12

Latest patents

Publication Filing date Title
DE102020210833A1 Process for the production of a single crystal silicon
WO2021020340A1 Lamination wafer and laminated-wafer manufacturing method using same
JP2020161556A Electrical characteristic measuring apparatus and electrical characteristic measuring method
JP2020161557A Gap control method and electrical characteristic measurement method
JP2020115531A Method for manufacturing electrode for dlts measurement
JP2020098115A Measurement method for ultra-low oxygen concentration in silicon wafer
JP2020064891A Heat treatment method for silicon wafer
JP2020045258A Method for manufacturing silicon single crystal
JP2020041809A Method for preparing analytical sample of silicon crystal and method for quantifying trace amount of impurity in silicon crystal
JP2020035903A Silicon wafer manufacturing method
JP2020021766A Manufacturing method of silicon wafer
CN110945632A Method for manufacturing three-dimensional structure, method for manufacturing vertical transistor, wafer for vertical transistor, and substrate for vertical transistor
JP2020004760A Manufacturing method of epitaxial silicon wafer
JP2019192831A Heat treatment method for silicon wafer
JP2019123656A Production method of silicon single crystal
JP2019114665A Evaluation method of silicon wafer
JP2019114633A Metal contamination evaluation method
JP2019087654A Interface level density measuring device
JP2019087653A Electrical conductivity measurement device of dielectric film
JP2019029387A Method for measuring resistance of silicon wafer