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BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTD

Overview
  • Total Patents
    47
  • GoodIP Patent Rank
    32,053
  • Filing trend
    ⇩ 95.0%
About

BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTD has a total of 47 patent applications. It decreased the IP activity by 95.0%. Its first patent ever was published in 2015. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, surface technology and coating and materials and metallurgy are TIVRA CORP, FUJIWARA SHINSUKE and SHANGHAI ZING SEMICONDUCTOR CORP.

Patent filings in countries

World map showing BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTDs patent filings in countries
# Country Total Patents
#1 China 47

Patent filings per year

Chart showing BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Li Baiquan 15
#2 Zhang Jingwei 12
#3 Yuan Jun 12
#4 Ni Weijiang 11
#5 Li Mingshan 11
#6 Cheng Zhangyong 11
#7 Liu Xinyu 10
#8 Niu Xiping 8
#9 Yang Liwen 8
#10 Wang Xiaoliang 6

Latest patents

Publication Filing date Title
CN110752146A Method for growing gallium nitride film on silicon substrate
CN110767747A Enhanced GaN-based high electron mobility transistor material structure
CN110767746A HEMT structure with in-situ grown dielectric layer as cap layer and manufacturing method thereof
CN110739207A method and device for growing GaN epitaxial material on conductive SiC substrate
CN111647945A Preparation method of aluminum nitride crystal
CN108179470A A kind of aluminum nitride crystal growth method of low cost
CN107954418A A kind of multi-disc carborundum pyrolytic graphite alkene preparation method
CN107955970A A kind of growing method of high quality aluminum-nitride single crystal
CN108149324A A kind of novel aluminum nitride spontaneous nucleation growing method
CN108085745A A kind of aluminum nitride crystal growth is prepared with homo-substrate and expanding growing method
CN108166059A A kind of aluminium nitride substrate prepares and expanding growing method
CN108147821A A kind of high-purity nitride porous aluminium crystallite material source preparation method
CN107904661A A kind of growing method of low stress nitride aluminium crystal
CN107634104A High radiating GaN diode structure of a kind of metal buried regions and preparation method thereof
CN107359220A A kind of AlGaN ultraviolet detectors with two-dimensional electron gas denoising shading ring
CN107516667A A kind of the GaN HEMT structure cells and device of more Two-dimensional electron gas channels
CN107393890A A kind of graphene buries heat dissipating layer and longitudinal channel GaN MISFET structure cells and preparation method
CN107564960A A kind of GaNFinFETHEMT devices
CN107240605A A kind of GaN MIS raceway grooves HEMT device and preparation method
CN107170809A A kind of GaNHEMT devices and its manufacture method based on self-registered technology