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WO2010043068A1
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Electrically erasable programmable memory and its manufacture method
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WO2010031203A1
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High resistivity semiconductor resistance element
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TW200842522A
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Developing method capable of improving critical dimension uniformity
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TW200842954A
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Device for preventing contamination caused by fallen wafers
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TW200842982A
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Method of manufacturing Schottky diode
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TW200843354A
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Phase-locked loop with enhanced output clock performance by use of variable-stage voltage controlled oscillator
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TW200843106A
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PMOS structure with dual ion implantation and method thereof
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TW200843032A
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Metal wire with enhanced transmission property and the method of making the same
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TW200841939A
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Method for improved developing process
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TW200843041A
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Flash memory structure and manufacturing method thereof
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TW200843023A
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A carrying tray with position-calibrating function
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TW200842311A
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Measurement method for optical mask layout
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TW200842985A
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Method of manufacturing device with high breakdown voltage which utilizes deep sub-micron technology
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TW200843007A
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Method of detecting temperature distribution of wafer in reaction chamber
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TW200842980A
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Method of reducing deposit created inside reaction chamber during etching process
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TW200843073A
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Method for automatically resetting product identification code by semiconductor factory
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TW200842968A
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Off-line examination system for pneumatic device and its testing method
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TW200842979A
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Fabrication method using single silicon oxide layer as source/drain doping shielding layer and metallic silicide barrier layer
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TW200841989A
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Method for preventing CMP diamond scratch formation
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TW200842943A
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Method of monitoring cleanness of CVD reaction chamber and cleansing duration
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