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GLOBALFOUNDRIES INC

Overview
  • Total Patents
    6,278
  • GoodIP Patent Rank
    310
  • Filing trend
    ⇩ 16.0%
About

GLOBALFOUNDRIES INC has a total of 6,278 patent applications. It decreased the IP activity by 16.0%. Its first patent ever was published in 1996. It filed its patents most often in United States, China and Germany. Its main competitors in its focus markets semiconductors, computer technology and optics are GLOBALFOUNDRIES US INC, SEMICONDUCTOR MFG INT CORP (SHANGHAI) and TAIWAN SEMICONDUCTOR MFG CO LTD.

Patent filings per year

Chart showing GLOBALFOUNDRIES INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Xie Ruilong 538
#2 Zang Hui 356
#3 Cheng Kangguo 206
#4 Park Chanro 158
#5 Zhang Xunyuan 146
#6 Jacob Ajey Poovannummoottil 140
#7 Chi Min-Hwa 135
#8 Hoentschel Jan 127
#9 Khakifirooz Ali 119
#10 Bouche Guillaume 116

Latest patents

Publication Filing date Title
US2021091183A1 Heterojunction bipolar transistor
US2021091189A1 Heterojunction bipolar transistor
US10784846B1 Differential clock duty cycle correction with hybrid current injectors and tapered digital to analog converter
US10788877B1 Transition once multiplexer circuit
US2021091180A1 Virtual bulk in semiconductor on insulator technology
US10735000B1 Pre-driver circuits for an output driver
US10816728B1 Polarizers with confinement cladding
US2021111141A1 Partitioned substrates with interconnect bridge
US10747030B1 Electro-optic modulators with stacked layers
US10910276B1 STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method
US10832839B1 Metal resistors with a non-planar configuration
US2021082532A1 Sensing circuits for charge trap transistors
US2021074842A1 Semiconductor device with gate cut structure
US10809633B1 Overlay control with corrections for lens aberrations
US2021074730A1 Vertically stacked field effect transistors
US10892222B1 Anti-fuse for an integrated circuit (IC) product and method of making such an anti-fuse for an IC product
US10747254B1 Circuit structure for adjusting PTAT current to compensate for process variations in device transistor
US2021063531A1 Transmitter unit suitable for millimeter wave devices
US2021066463A1 Stress layout optimization for device performance
US2021066118A1 Semiconductor structures including stacked depleted and high resistivity regions