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GLOBALFOUNDRIES US INC

Overview
  • Total Patents
    1,078
  • GoodIP Patent Rank
    1,989
  • Filing trend
    ⇩ 36.0%
About

GLOBALFOUNDRIES US INC has a total of 1,078 patent applications. It decreased the IP activity by 36.0%. Its first patent ever was published in 2003. It filed its patents most often in Taiwan, United States and Germany. Its main competitors in its focus markets semiconductors, computer technology and optics are TAIWAN SEMICONDUCTOR MFG CO LTD, ST MICROELECTRONICS CROLLES 2 and TAIWAN SEMICONDUCTOR MFG.

Patent filings in countries

World map showing GLOBALFOUNDRIES US INCs patent filings in countries
# Country Total Patents
#1 Taiwan 978
#2 United States 69
#3 Germany 27
#4 China 3
#5 WIPO (World Intellectual Property Organization) 1

Patent filings per year

Chart showing GLOBALFOUNDRIES US INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Xie Ruilong 89
#2 Zang Hui 53
#3 Hoentschel Jan 40
#4 Stamper Anthony K 36
#5 Flachowsky Stefan 31
#6 Bouche Guillaume 28
#7 Jain Vibhor 27
#8 Zhang Xunyuan 27
#9 Frougier Julien 27
#10 Richter Ralf 26

Latest patents

Publication Filing date Title
DE102020126945A1 GATE CONTROLLED LATERAL BIPOLAR / HETEROJUNCTION TRANSISTORS
DE102020126337A1 LAYOUT STRUCTURES WITH SEVERAL FINGERS OF SEVERAL LENGTHS
DE102020126167A1 FIELD EFFECT TRANSISTORS WITH CHANNEL AREAS INCLUDING A TWO-DIMENSIONAL MATERIAL ON A MANDREL
DE102020123812A1 HETEROJUNCTION BIPOLAR TRANSISTOR WITH MARKER LAYER
US2021091214A1 Heterojunction bipolar transistor with marker layer
US2021111247A1 Double mesa heterojunction bipolar transistor
US2021091236A1 Junction field effect transistor (jfet) structure and methods to form same
US2021091200A1 Transistor structure with overlying gate on polysilicon gate structure and related method
US2021098612A1 Complementary transistor structures formed with the assistance of doped-glass layers
US10964367B1 MRAM device comprising random access memory (RAM) and embedded read only memory (ROM)
US2021091213A1 Heterojunction bipolar transistors with airgap isolation
US10955614B1 Optical fiber coupler structure having manufacturing variation-sensitive transmission blocking region
US2021091212A1 Asymmetrical lateral heterojunction bipolar transistors
US2021091195A1 Heterojunction bipolar transistors
US10989876B1 Optical fiber coupler having hybrid tapered waveguide segments and metamaterial segments
US10969544B1 Grating-based filters for photonics applications
US10957701B1 Fin-based anti-fuse device for integrated circuit (IC) products, methods of making such an anti-fuse device and IC products comprising such an anti-fuse device
US10983412B1 Silicon photonic components fabricated using a bulk substrate
US2021125922A1 Dummy fill structures
US2021126086A1 Metal-insulator-metal capacitors including nanofibers