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EUV LLC

Overview
  • Total Patents
    129
About

EUV LLC has a total of 129 patent applications. Its first patent ever was published in 1998. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets optics, micro-structure and nano-technology and engines, pumps and turbines are ADVANCED MASK TECHNOLOGY CT GMBH & CO KG, SCHELLENBERG FRANKLIN MARK and ASML HOLLAND BV.

Patent filings per year

Chart showing EUV LLCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Klebanoff Leonard E 27
#2 Ray-Chaudhuri Avijit K 18
#3 Sweatt William C 15
#4 Tichenor Daniel A 12
#5 Sweeney Donald W 12
#6 Haney Steven J 10
#7 Kanouff Michael P 10
#8 Naulleau Patrick P 9
#9 Kubiak Glenn D 9
#10 Stulen Richard H 8

Latest patents

Publication Filing date Title
US2006262435A1 Vacuum compatible, high-speed, 2-D mirror tilt stage
US2010124723A1 Method for the protection of extreme ultraviolet lithography optics
US7081992B2 Condenser optic with sacrificial reflective surface
US2005083515A1 Extended surface parallel coating inspection method
US6859263B2 Apparatus for generating partially coherent radiation
US2004131775A1 Compliant layer chucking surface
US6888297B2 Method and apparatus for debris mitigation for an electrical discharge source
US6781135B2 Universal EUV in-band intensity detector
US6906781B2 Reticle stage based linear dosimeter
US2004061868A1 Figure correction of multilayer coated optics
US2004063226A1 Growth of multi-component alloy films with controlled graded chemical composition on sub-nanometer scale
US2004062998A1 Etched-multilayer phase shifting masks for EUV lithography
US2004062999A1 Method for the manufacture of phase shifting masks for EUV lithography
US2004050317A1 Adhesive particle shielding
US6700644B2 Condenser for photolithography system
US6847463B2 Method and apparatus for detecting the presence and thickness of carbon and oxide layers on EUV reflective surfaces
US6768567B2 Synchrotron-based EUV lithography illuminator simulator
US2003164949A1 Correction of localized shape errors on optical surfaces by altering the localized density of surface or near-surface layers
US2003008180A1 Optimized capping layers for EUV multilayers
US6563907B1 Radiation source with shaped emission