BRILLIANCE SEMICONDUCTOR INC has a total of 20 patent applications. Its first patent ever was published in 2001. It filed its patents most often in Taiwan, China and United States. Its main competitors in its focus markets computer technology, semiconductors and basic communication technologies are FUJITA MASASHI, XICOR INC and MATSUZAKI TAKANORI.
# | Country | Total Patents | |
---|---|---|---|
#1 | Taiwan | 6 | |
#2 | China | 5 | |
#3 | United States | 5 | |
#4 | Japan | 3 | |
#5 | EPO (European Patent Office) | 1 |
# | Industry | |
---|---|---|
#1 | Computer technology | |
#2 | Semiconductors | |
#3 | Basic communication technologies |
# | Technology | |
---|---|---|
#1 | Static stores | |
#2 | Semiconductor devices | |
#3 | Pulse technique | |
#4 | Data recognition and presentation |
# | Name | Total Patents |
---|---|---|
#1 | Yang Hong-Ming | 5 |
#2 | Wang Chih-Hsien | 3 |
#3 | Liaw Shion-Hau | 3 |
#4 | Tsai Doung-Her | 2 |
#5 | Liaw Shiou-Han | 2 |
#6 | Yang Hung-Ming | 2 |
#7 | Laiw Shion-Han | 2 |
#8 | Chen Li-Yeh | 1 |
#9 | Tsui Kai-Ping | 1 |
#10 | Chen Li-Ye | 1 |
Publication | Filing date | Title |
---|---|---|
CN1521634A | Virtual NOR type flash memory | |
EP1443553A1 | Fabrication method of static random access memory cell | |
TW200411673A | Virtual NOR (not-or) type flash memory | |
CN1482546A | Charging-free ultra-low power virtual dynamic random access memory | |
TWI283406B | Charging-free ultra-low power virtual dynamic random access memory | |
CN1841564A | Combined static RAM and mask ROM storage unit | |
CN1472816A | Nonvolatile static ROM memories | |
TWI249165B | Memory cell combining static random access memory with mask read only memory | |
TWI282092B | Nonvolatile static random access memory cell | |
JP2003303129A | Intelligent type multifunctional compound memory | |
TW522526B | Method for improving the SRAM cell stability | |
TWI275247B | Variable voltage tolerant input/output circuit |