Combination field programmable gate array allowing dynamic reprogrammability
US6992925B2
High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordline
US6972986B2
Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdown
US6940751B2
High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown
US6898116B2
High density semiconductor memory cell and memory array using a single transistor having a buried N+ connection
US6924664B2
Field programmable gate array
US6791891B1
Method of testing the thin oxide of a semiconductor memory cell that uses breakdown voltage
US6650143B1
Field programmable gate array based upon transistor gate oxide breakdown
US6777757B2
High density semiconductor memory cell and memory array using a single transistor
US6766960B2
Smart card having memory using a breakdown phenomena in an ultra-thin dielectric
US6700151B2
Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric
US6798693B2
Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
