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INFINEON TECHNOLOGIES FLASH GM

Overview
  • Total Patents
    78
About

INFINEON TECHNOLOGIES FLASH GM has a total of 78 patent applications. Its first patent ever was published in 2003. It filed its patents most often in United States, Germany and China. Its main competitors in its focus markets computer technology, semiconductors and measurement are ADESTO TECHNOLOGIES CORP, CONTOUR SEMICONDUCTOR INC and QIMONDA NORTH AMERICA CORP.

Patent filings in countries

World map showing INFINEON TECHNOLOGIES FLASH GMs patent filings in countries

Patent filings per year

Chart showing INFINEON TECHNOLOGIES FLASH GMs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Curatolo Giacomo 10
#2 Willer Josef 9
#3 Augustin Uwe 8
#4 Cohen Zeev 7
#5 Srowik Rico 7
#6 De Ambroggi Luca 6
#7 Seidel Konrad 5
#8 Kern Thomas 5
#9 Ambroggi Luca De 4
#10 Ben-Ari Nimrod 4

Latest patents

Publication Filing date Title
US2008106960A1 Memory device architecture and method for improved bitline pre-charge and wordline timing
US2008091753A1 Device with memory and method of operating device
US2008013390A1 Memory array architecture and method for high-speed distribution measurements
US2007296486A1 Voltage generator circuit, method for providing an output voltage and electronic memory device
US2007300106A1 Integrated memory device and method for its testing and manufacture
US2007242518A1 Method for programming a block of memory cells, non-volatile memory device and memory card device
DE102006010979B3 Read voltage adjusting method for e.g. nitride read only memory, involves utilizing adjusted read voltage or read voltage within adjusted voltage range in normal mode of memory to read data from memory cells
DE102006005077B3 Method for operating a semiconductor memory device and semiconductor memory device
US2007130449A1 Processing arrangement, memory card device and method for operating and manufacturing a processing arrangement
US2007121396A1 Semiconductor memory device having a redundancy information memory directly connected to a redundancy control circuit
US2007115720A1 Non-volatile semiconductor memory device and method for operating a non-volatile memory device
DE102005055292A1 A semiconductor memory and method for operating a semiconductor memory comprising a plurality of memory cells
DE102005049845A1 Memory cells e.g. electrically EEPROM-memory cells, testing method for e.g. computer, involves restoring stored information of cells, which are assigned to weak group, to modify characteristic of cells
US2007076464A1 Memory device and method for operating a memory device
DE102005045356A1 Integrated circuit arrangement
US2007064499A1 Semiconductor memory device and method for writing data into the semiconductor memory device
US2007035992A1 Non-volatile semiconductor memory and method for reading a memory cell
US2007023871A1 Semiconductor package based on lead-on-chip architecture, the fabrication thereof and a leadframe for implementing in a semiconductor package
US2007014160A1 Non-volatile semiconductor memory
US2007016720A1 Non-volatile memory cell device, programming element and method for programming data into a plurality of non-volatile memory cells