Program-disturb management for phase change memory
US2013290604A1
Program-disturb decoupling for adjacent wordlines of a memory device
US2013262743A1
Encoding program bits to decouple adjacent wordlines in a memory device
US2013227369A1
Error detection or correction of stored signals after one or more heat events in one or more memory devices
US2013159796A1
Read bias management to reduce read errors for phase change memory
US2012182783A1
Programming an array of resistance random access memory cells using unipolar pulses
US2012092923A1
Read distribution management for phase change memory
US2010284212A1
Method for multilevel programming of phase change memory cells using adaptive reset pulses
WO2011080784A1
Methods for a phase-change memory array
WO2011080768A1
Memory devices comprising partitions with particular ecc attributes
US2013010533A1
Descending set verify for phase change memory
WO2011080769A1
Mixed mode programming for phase change memory
US2013040584A1
Apparatus and method for reading a phase-change memory cell
WO2011067795A1
Refresh architecture and algorithm for non-volatile memories
US2011113303A1
Method and apparatuses for customizable error correction of memory
US2010128517A1
Phase-change memory device with discharge of leakage currents in deselected bitlines and method for discharging leakage currents in deselected bitlines of a phase-change memory device
WO2010076834A1
Reliable set operation for phase-change memory cell