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MU FUCHEN

Overview
  • Total Patents
    14
About

MU FUCHEN has a total of 14 patent applications. Its first patent ever was published in 2008. It filed its patents most often in United States. Its main competitors in its focus markets computer technology and semiconductors are LEE JI-SANG, LARA TECHNOLOGY INC and JUNG SEONG-OOK.

Patent filings in countries

World map showing MU FUCHENs patent filings in countries
# Country Total Patents
#1 United States 14

Patent filings per year

Chart showing MU FUCHENs patent filings per year from 1900 to 2020

Focus industries

Top inventors

# Name Total Patents
#1 Mu Fuchen 14
#2 Wang Yanzhuo 9
#3 He Chen 7
#4 Wu Lifeng 1
#5 Schmid Benjamin A 1
#6 Eguchi Richard K 1
#7 Bogucki Paul A 1
#8 Wang Yanzhou 1
#9 Baker Jr Frank K 1

Latest patents

Publication Filing date Title
US2015085593A1 Non-volatile memory (NVM) with dynamically adjusted reference current
US2015049555A1 Extended protection for embedded erase of non-volatile memory cells
US2014321211A1 Non-volatile memory (NVM) with variable verify operations
US2013194874A1 Dynamic healing of non-volatile memory cells
US2014204678A1 Dynamic detection method for latent slow-to-erase bit for high performance and high reliability flash memory
US2014143630A1 Dynamic read scheme for high reliability high performance flash memory
US2014063946A1 Non-volatile memory (NVM) that uses soft programming
US2014029335A1 Methods and systems for adjusting NVM cell bias conditions based upon operating temperature to reduce performance degradation
US2014029351A1 Methods and systems for adjusting NVM cell bias conditions for program/erase operations to reduce performance degradation
US2014029350A1 Methods and systems for adjusting NVM cell bias conditions for read/verify operations to compensate for performance degradation
US2013308402A1 Test flow to detect a latent leaky bit of a non-volatile memory
US2013290808A1 Erasing a non-volatile memory (NVM) system having error correction code (ECC)
US2013194875A1 Structure and method for healing tunnel dielectric of non-volatile memory cells
US8290759B1 Negative bias temperature instability in dynamic operation of an integrated circuit