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ADAM THOMAS N

Overview
  • Total Patents
    35
About

ADAM THOMAS N has a total of 35 patent applications. Its first patent ever was published in 2004. It filed its patents most often in United States and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, digital networks and computer technology are Suzhou hanhua semiconductor co ltd, ALPAD CORP and TREZZA JOHN.

Patent filings in countries

World map showing ADAM THOMAS Ns patent filings in countries

Patent filings per year

Chart showing ADAM THOMAS Ns patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Adam Thomas N 35
#2 Reznicek Alexander 28
#3 Cheng Kangguo 21
#4 Khakifirooz Ali 18
#5 Doris Bruce B 7
#6 Sadana Devendra K 6
#7 Bedell Stephen W 6
#8 Holt Judson R 5
#9 Kulkarni Pranita 4
#10 Li Jinghong 4

Latest patents

Publication Filing date Title
US2014038369A1 Method of forming fin-field effect transistor (finFET) structure
US2014027863A1 Merged fin finFET with (100) sidewall surfaces and method of making same
US2014024181A1 Semiconductor structure having NFET extension last implants
US2014001554A1 Semiconductor device with epitaxial source/drain facetting provided at the gate edge
US2013292766A1 Semiconductor substrate with transistors having different threshold voltages
US2013285152A1 FinFET with enhanced embedded stressor
US2013285123A1 Transistor with improved sigma-shaped embedded stressor and method of formation
US2013270655A1 Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structures
US2013270611A1 Semiconductor structure having a source and a drain with reverse facets
US2013270638A1 Strained soi finfet on epitaxially grown box
US2013207226A1 Recessed device region in epitaxial insulating layer
US2013200459A1 Strained channel for depleted channel semiconductor devices
US2013193492A1 Silicon carbon film structure and method
US2013187205A1 Epitaxial replacement of a raised source/drain
US2013168820A1 Power sige heterojunction bipolar transistor (HBT) with improved drive current by strain compensation
US2013161693A1 Thin heterostructure channel device
US2013146952A1 On-chip capacitors in combination with CMOS devices on extremely thin semiconductor on insulator (ETSOI) substrates
US2013126944A1 Heterojunction bipolar transistor with epitaxial emitter stack to improve vertical scaling
US2013099318A1 Thin semiconductor-on-insulator mosfet with co-integrated silicon, silicon germanium and silicon doped with carbon channels
US2012319166A1 Transistor with buried silicon germanium for improved proximity control and optimized recess shape