BABCOCK JEFFREY A has a total of 11 patent applications. Its first patent ever was published in 2005. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors and measurement are KADOGUCHI TAKUYA, TSAI CHUN HSIUNG and SHANGHAI HUALI INTEGRATED CIRCUIT CORP.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 11 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Measurement |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Analysing materials |
# | Name | Total Patents |
---|---|---|
#1 | Babcock Jeffrey A | 11 |
#2 | Howard Gregory E | 4 |
#3 | Pinto Angelo | 4 |
#4 | Sadovnikov Alexei | 3 |
#5 | Mirgorodski Yuri | 3 |
#6 | Desai Saurabh | 3 |
#7 | Lavrovskaya Natalia | 3 |
#8 | Haeusler Alfred | 2 |
#9 | Balster Scott | 2 |
#10 | Hausler Alfred | 2 |
Publication | Filing date | Title |
---|---|---|
US8525233B1 | Sige heterojunction bipolar transistor with a shallow out-diffused p+ emitter region | |
US2013249057A1 | SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product | |
US2013009271A1 | Schottky-clamped bipolar transistor with reduced self heating | |
US2012060587A1 | Gas detector that utilizes an electric field to assist in the collection and removal of gas molecules | |
US2010032731A1 | Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures | |
US2005250289A1 | Control of dopant diffusion from buried layers in bipolar integrated circuits |