Learn more

YIN HAIZHOU

Overview
  • Total Patents
    84
About

YIN HAIZHOU has a total of 84 patent applications. Its first patent ever was published in 2010. It filed its patents most often in United States and China. Its main competitors in its focus markets semiconductors, digital networks and environmental technology are RANADE PUSHKAR, YILMAZ HAMZA and ANHUI ASKY QUANTUM TECHNOLOGY CO LTD.

Patent filings in countries

World map showing YIN HAIZHOUs patent filings in countries
# Country Total Patents
#1 United States 83
#2 China 1

Patent filings per year

Chart showing YIN HAIZHOUs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Yin Haizhou 84
#2 Zhu Huilong 66
#3 Luo Zhijiong 58
#4 Jiang Wei 8
#5 Zhang Keke 7
#6 Luo Zhijong 4
#7 Luo Jun 3
#8 Liu Yunfei 2
#9 Yu Weize 2
#10 Zhong Huicai 2

Latest patents

Publication Filing date Title
US2013276872A1 Solar cell unit and method for manufacturing the same
US2013299920A1 Semiconductor device and method for manufacturing the same
US8530328B1 Method for manufacturing semiconductor device
US2013082354A1 Semiconductor structure and method for manufacturing the same
US2013256845A1 Semiconductor device and method for manufacturing the same
US2013256810A1 Semiconductor Device and Method for Manufacturing the Same
US2013260532A1 Method for Manufacturing Semiconductor Device
US2013043517A1 Semiconductor Structure And Method For Manufacturing The Same
US2012302025A1 Method for Manufacturing a Semiconductor Structure
US2013001691A1 Method for manufacturing a semiconductor structure
US2012313158A1 Semiconductor structure and method for manufacturing the same
US2012313149A1 Semiconductor structure and method for manufacturing the same
US2012319181A1 Semiconductor structure and method for manufacturing the same
US2012261772A1 Semiconductor Device and Method for Manufacturing the Same
US2012329228A1 Method for forming a strained semiconductor channel
US2012061736A1 Transistor and method for forming the same
US2012235244A1 Semiconductor Structure and Method for Manufacturing the Same
US2012056267A1 Hybrid channel semiconductor device and method for forming the same
US2012214289A1 Method for forming semiconductor substrate isolation
US2012080722A1 Method for forming strained semiconductor channel and semiconductor device