Multifunctional machine for the uniform processing of substrates by controlled energy ion beam
FR2820880A1
Semiconductor material etching ion source multiple charged beam having ionization reactor with extractor wall/ionization input and input/output poles with enclosing flux magnetic field.
FR2820151A1
Multicharged ion beam sweeping using repeated sweeping over a single zone of a substrate with a displacement of the beam after each passage to cover the whole surface of the substrate
FR2815773A1
Process for producing a formed grid oxide on a semiconductor substrate
FR2815770A1
Highly selective ionic lithography by an active interaction between multicharged and decelerated ions and the dielectric layer to be engraved and the selective neutralization of these ions outside the active interaction
FR2808378A1
Active crosslink, method of making such a crosslink, method of ion lithography using such crosslink and equipment for implementing same
FR2805925A1
Method for controlling the uniformity of treating a surface with a particle beam and implementing equipment
FR2804764A1
Active reticle, method of making and controlling such a reticle, ion lithography method using such a reticle and implementing equipment
FR2804246A1
Ion lithography process, high contrast coating, equipment and reticle for implementation
FR2800477A1
Ion lithography method, implementing equipment, and crosslinked for such equipment
FR2797349A1
Component with mono-electron elements and quantum device, as well as industrial production method and multi-chamber implementation reactor
FR2794892A1
Dielectric thin layer etching process on silicon substrate and implementing equipment
FR2793349A1
Process for growing a low thickness silicon oxide layer on a surface of silicon substrate and machine having two implementation reactors
FR2793264A1
Method for cleaning a surface of a silicon substrate and application to the manufacture of integrated electronic components
