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X-FAB SEMICONDUCTOR FOUNDRIES AG

Overview
  • Total Patents
    17
  • GoodIP Patent Rank
    145,453
  • Filing trend
    ⇩ 100.0%
About

X-FAB SEMICONDUCTOR FOUNDRIES AG has a total of 17 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2009. It filed its patents most often in Germany, United States and EPO (European Patent Office). Its main competitors in its focus markets semiconductors, measurement and electrical machinery and energy are CHIU TZUYIN, YEN HSIAO-TSUNG and ENPIRION INC.

Patent filings in countries

World map showing X-FAB SEMICONDUCTOR FOUNDRIES AGs patent filings in countries

Patent filings per year

Chart showing X-FAB SEMICONDUCTOR FOUNDRIES AGs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Lerner Ralf 5
#2 Gaebler Daniel 4
#3 Kittler Gabriel 2
#4 Hering Siegfried 2
#5 Knechtel Roy 1
#6 Kerekes Tibor 1
#7 Eisenbrandt Stefan 1
#8 Dempwolf Sophia 1
#9 Hofmann Peter 1
#10 Boury Bruno 1

Latest patents

Publication Filing date Title
DE102016123037A1 Two-tap optical sensor for photon-generated visible light and IR light
EP3282265A1 Semiconductor circuits, devices and methods
DE102016110425A1 Planar coil
DE102016109950B3 Integrated circuit having a component applied by a transfer pressure and method for producing the integrated circuit
GB201516784D0 Light shield for light sensitive elements
DE102015104820A1 Production of an opto-electronic semiconductor component and integrated circuit structure
US2017271397A1 Anti-Reflective Treatment Of The Rear Side Of A Semiconductor Wafer
US2014264740A1 Semiconductor device
DE102012013136A1 A method of manufacturing a lateral bipolar transistor integrated in a CMOS circuit
DE102011115603A1 Design rules for a layout of MOS transistors with different breakdown voltages in an integrated circuit
DE102010033705A1 Test system and method for characterizing magnetic field sensors in combination with semiconductor wafers
DE102009051520A1 Process for the production of silicon semiconductor wafers with layer structures for the integration of III-V semiconductor devices