|
CN112289882A
|
|
Manufacturing method of avalanche photodiode
|
|
CN110571307A
|
|
Photoelectric detection product bonding wire coating process
|
|
CN110534439A
|
|
Silicon wafer gasket is used for the packaging method of avalanche diode noise reduction
|
|
CN110534413A
|
|
A method of it increasing silicon substrate digital isolator aluminium and pads bond-pull
|
|
CN110504278A
|
|
A kind of cross flow proof photosensitive diode chip and its manufacturing method
|
|
CN109461652A
|
|
A method of it is abnormal to improve thick metal layers LIFT OFF technique figure
|
|
CN109003962A
|
|
A kind of manufacturing method of high frequency silicon capacitor
|
|
CN108335988A
|
|
A kind of production method of silicon capacitance
|
|
CN108319107A
|
|
A kind of production method of nano-imprint stamp
|
|
CN108345025A
|
|
A kind of X-ray detector
|
|
CN106997878A
|
|
The silicon capacitor and its manufacture method of double-decker
|
|
CN105869827A
|
|
Device unit body containing metal, polyimide and blocking layer structure and fabrication method of device unit body
|
|
CN105448978A
|
|
Epitaxial layer structure for silicon base integrated mHEMT devices and growing method of epitaxial layer structure
|
|
CN103681242A
|
|
Silicon substrate thick metal etching pretreatment process
|
|
CN103681243A
|
|
Method for improving surface damage of SOI (Silicon-On-Insulator) substrate
|
|
CN103681288A
|
|
High-reliability growth technique for low-temperature gate oxide layer
|
|
CN103681881A
|
|
High-reliability stackable and high-speed SOI diode
|
|
CN103700648A
|
|
Metal interconnecting structure for high-temperature circuit and preparing method of metal interconnecting structure
|
|
CN103681479A
|
|
Method for improving tolerance of multilayer wiring through hole photoetching technology
|
|
CN103681241A
|
|
Cleaning method capable of improving quality of oxide layer
|
