WACOM R & D CORP has a total of 15 patent applications. Its first patent ever was published in 1978. It filed its patents most often in Japan, United States and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, measurement and surface technology and coating are IDEAL ENERGY SHANGHAI SUNFLOWER THIN FILM EQUIPMENT LTD, TETOS CO LTD and MECHARONICS CO LTD.
# | Country | Total Patents | |
---|---|---|---|
#1 | Japan | 7 | |
#2 | United States | 2 | |
#3 | WIPO (World Intellectual Property Organization) | 2 | |
#4 | Germany | 1 | |
#5 | Spain | 1 | |
#6 | France | 1 | |
#7 | United Kingdom | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Measurement | |
#3 | Surface technology and coating | |
#4 | Chemical engineering | |
#5 | Audio-visual technology | |
#6 | Transport | |
#7 | Materials and metallurgy | |
#8 | Environmental technology |
# | Name | Total Patents |
---|---|---|
#1 | Umeda Masaru | 9 |
#2 | Toda Masayuki | 7 |
#3 | Kusuhara Masaki | 5 |
#4 | Tsuda Masayuki | 2 |
#5 | Sasaki Yoshikazu | 1 |
#6 | Hayashi Makoto | 1 |
#7 | Kuroki Shinichiro | 1 |
#8 | Kotani Koji | 1 |
#9 | Onoe Atsushi | 1 |
#10 | Fujimoto Kenjiro | 1 |
Publication | Filing date | Title |
---|---|---|
JP2019183284A | Film forming method and film forming device for forming nitride film using mocvd apparatus, and shower head | |
JP2017191882A | Hafnium nitride film manufacturing method, and hafnium nitride film | |
JP2016195214A | Film forming method and film forming device for forming nitride film using mocvd apparatus, and shower head | |
JP2016175453A | Hydrogen generation system and hydrogen recovery system | |
JP2014013645A | Information recording reproduction memory medium | |
JP2010179985A | Levitation conveying apparatus and levitation conveying method | |
JP2010180433A | Vaporizer, vaporizer for mocvd using the vaporizer, center rod used for these vaporizers or the vaporizer for mocvd, method for dispersing carrier gas, and method for vaporizing carrier gas | |
WO2008004571A1 | Ferroelectric thin film forming method and ferroelectric memory | |
GB1545746A | Integrated circuit chip and crystal oscillator combination circuit package |