Learn more

JIANGSU JIETAI PHOTOELECTRIC TECH CO LTD

Overview
  • Total Patents
    16
  • GoodIP Patent Rank
    104,052
About

JIANGSU JIETAI PHOTOELECTRIC TECH CO LTD has a total of 16 patent applications. Its first patent ever was published in 2019. It filed its patents most often in China. Its main competitors in its focus markets environmental technology, semiconductors and surface technology and coating are SOLAR FIELDS LLC, PRIMESTAR SOLAR INC and FELDMAN-PEABODY SCOTT DANIEL.

Patent filings in countries

World map showing JIANGSU JIETAI PHOTOELECTRIC TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 16

Patent filings per year

Chart showing JIANGSU JIETAI PHOTOELECTRIC TECH CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Chen Jia 9
#2 Shangguan Quanyuan 7
#3 Lin Jianwei 6
#4 Yan Lu 5
#5 Liu Ningjie 5
#6 Ma Limin 5
#7 Liu Zhifeng 3
#8 Ji Genhua 3
#9 Du Zheren 3
#10 Lu Junyu 2

Latest patents

Publication Filing date Title
CN112271237A Preparation method and system of TOPCon solar cell in-situ doped passivation layer
CN112271235A Preparation method and system of TOPCon solar cell silicon oxide layer
CN112071954A Passivation contact structure and preparation method of solar cell thereof
CN112071953A Method and device for preparing passivated contact solar cell by plate-type equipment
CN112071950A Method for preparing passivated contact cell by PECVD (plasma enhanced chemical vapor deposition) equipment
CN111243943A Integrated coating method for silicon oxide and doped amorphous silicon of TOPCon battery
CN111172518A Integrated film coating method based on silane
CN111146311A Boron diffusion method and N-type solar cell preparation method
CN111074217A Amorphous silicon-doped target material and solar cell preparation method
CN111029438A Preparation method of N-type passivated contact solar cell
CN111063764A Preparation method of passivation contact structure
CN110983289A Method for preparing passivation contact structure based on LPCVD secondary ion implantation
CN111009593A Method for preparing local polycrystalline silicon thin film passivation contact based on PVD (physical vapor deposition) technology
CN110952073A Thin layer SiO2Preparation method of passivation film and prepared battery
CN111009592A SiO (silicon dioxide)2And preparation method of doped polycrystalline silicon laminated passivation film