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SICED ELECT DEV GMBH & CO KG

Overview
  • Total Patents
    80
About

SICED ELECT DEV GMBH & CO KG has a total of 80 patent applications. Its first patent ever was published in 1996. It filed its patents most often in Germany, EPO (European Patent Office) and United States. Its main competitors in its focus markets semiconductors, basic communication technologies and machines are SILICONIX INCORPORATED, HIRLER FRANZ and SILICONIX INC.

Patent filings per year

Chart showing SICED ELECT DEV GMBH & CO KGs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Mitlehner Heinz 43
#2 Friedrichs Peter 32
#3 Schoerner Reinhold 29
#4 Stephani Dietrich 27
#5 Peters Dethard 23
#6 Bartsch Wolfgang 11
#7 Elpelt Rudolf 11
#8 Rupp Roland 7
#9 Wiedenhofer Arno 5
#10 Tihanyi Jenoe 3

Latest patents

Publication Filing date Title
DE102009010890A1 Method for determining contact area of probe fitted on conductor or semiconductor material, involves obtaining contact area of probe and insulating layer, and measuring capacitance of contact area
DE102009010891A1 Method for producing MOSFET contacts on surface of silicon carbide semiconductor material of e.g. semiconductor element, involves heating metal layer to specific temperature, and removing metal layer from region of insulation layer
DE102008025243B3 Semiconductor device with asymmetrical edge termination
DE102008023609A1 Method for thermal annealing and electrical activation of implanted silicon carbide semiconductors
DE102006045312B3 Semiconductor device with coupled junction field effect transistors
DE102005046706A1 JBS-SiC semiconductor device
DE102005046707B3 SiC-PN power diode
DE102005011702A1 Semiconductor component, in particular diode, and associated manufacturing method
DE102004047313B3 Semiconductor arrangement with a tunnel contact and method for its production
DE102004047073B3 Production of edge passivation on silicon carbide-based semiconductors uses amorphous, semi-insulating layer of material with larger bandgap than silicon carbide
WO2004084310A1 Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure
DE10301949A1 CVD reactor for producing a silicon carbide single crystalline layer comprises a reaction chamber, a susceptor arranged in the reaction chamber, and a gas inlet with a diffuser and a homogenizing unit
DE10245867A1 Power semiconductor component, e.g. diode or metal oxide semiconductor field effect transistor, includes insulating layer with holes over terminals, onto which electrodes are deposited, making contact with terminals
DE10213534A1 Semiconductor structure with switching element and edge element
DE10161139A1 Semiconductor structure with Schottky diode for reverse operation
DE10147696A1 Semiconductor structure with two cathode electrodes and switching device with the semiconductor structure
DE10145765A1 Semiconductor structure with highly doped channel line area and method for producing a semiconductor structure
DE10143487A1 Switching device with a power switching element protected against overload
DE10135835C1 Switching device for switching at a high operating voltage
EP1222694A1 SiC semiconductor device having a Schottky contact and method of making the same