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SILICONIX INC

Overview
  • Total Patents
    602
About

SILICONIX INC has a total of 602 patent applications. Its first patent ever was published in 1963. It filed its patents most often in United States, EPO (European Patent Office) and Japan. Its main competitors in its focus markets semiconductors, machines and electrical machinery and energy are TRAN LUAN C, FABTECH INC and SUPER NOVA OPTOELECTRONICS CORP.

Patent filings per year

Chart showing SILICONIX INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Williams Richard K 191
#2 Hshieh Fwu-Iuan 82
#3 Chang Mike F 78
#4 Darwish Mohamed N 62
#5 Yilmaz Hamza 52
#6 Blanchard Richard A 50
#7 Ho Yueh-Se 39
#8 Owyang King 37
#9 Cornell Michael E 34
#10 Chen Kuo-In 31

Latest patents

Publication Filing date Title
JP2011035410A Trench-gate power mosfet equipped with protecting diode
JP2008199048A Manufacture of high-density trenched dmos using sidewall spacer
MY146293A Semiconductor package including die interposed between cup-shaped lead frame having mesas and valleys
WO2006058030A2 Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys
US2006038223A1 Trench MOSFET having drain-drift region comprising stack of implanted regions
TW200534359A Termination for trench MIS device having implanted drain-drift region
US2006110856A1 Method of fabricating semiconductor package including die interposed between cup-shaped lead frame having mesas and valleys
US2006108671A1 Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys
US2005242392A1 Super trench MOSFET including buried source electrode and method of fabricating the same
US2005215011A1 Termination for trench MIS device having implanted drain-drift region
US6927451B1 Termination for trench MIS device having implanted drain-drift region
CN1729578A Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US2004166636A1 Trench MIS device with thick oxide layer in bottom of gate contact trench
US2005054177A1 Triple-diffused trench MOSFET and method of fabricating the same
US2004038467A1 Trench MIS device having implanted drain-drift region and thick bottom oxide
US7033876B2 Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US6764906B2 Method for making trench mosfet having implanted drain-drift region
AU2002355547A1 Mis device having a trench gate electrode and method of making the same
US2003235959A1 Self-aligned differential oxidation in trenches by ion implantation
US2003235958A1 Thicker oxide formation at the trench bottom by selective oxide deposition