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HESTIA POWER INC

Overview
  • Total Patents
    28
  • GoodIP Patent Rank
    60,645
  • Filing trend
    ⇩ 100.0%
About

HESTIA POWER INC has a total of 28 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2013. It filed its patents most often in United States, Taiwan and China. Its main competitors in its focus markets semiconductors, basic communication technologies and electrical machinery and energy are WEEN SEMICONDUCTORS TECH CO LTD, GAN SYSTEMS INC and PAKAL TECHNOLOGIES LLC.

Patent filings in countries

World map showing HESTIA POWER INCs patent filings in countries
# Country Total Patents
#1 United States 12
#2 Taiwan 10
#3 China 6

Patent filings per year

Chart showing HESTIA POWER INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Yen Cheng-Tyng 21
#2 Hung Chien-Chung 21
#3 Lee Chwan-Ying 18
#4 Lee Lurng-Shehng 6
#5 Hung Hsiang-Ting 6
#6 Huang Yao-Feng 5
#7 Hong Jianzhong 5
#8 Yan Chengting 5
#9 Hsu Fu-Jen 5
#10 Li Chuanying 4

Latest patents

Publication Filing date Title
CN111211120A Silicon carbide semiconductor component integrating clamping voltage clamping circuit
TW201916373A Semiconductor power component realizes higher width and density under circumstance of no changing design rule
TWI640151B Intelligent power module capable of being driven by negative voltage gate at least including an upper bridge circuit, a lower bridge circuit, a first adjusting unit and a second adjusting unit
US2019181849A1 Intelligent power module operable to be driven by negative gate voltage
US2019081136A1 Semiconductor power device
US2017250275A1 Silicon carbide semiconductor device
TW201832361A Silicon carbide semiconductor element
US9761703B1 Wide bandgap semiconductor device with adjustable voltage level
CN107395195A A kind of wide energy gap semiconductor element of adjustable voltage quasi position
TW201738682A Adjustable voltage level wide bandgap semiconductor device
TWI581424B Silicon carbide semiconductor device and manufacturing method thereof capable of preventing devices from erroneous operation caused by low threshold voltage
US2016111533A1 Silicon carbide semiconductor device
US9368650B1 SiC junction barrier controlled schottky rectifier
TWI541998B Silicon carbide junction energy barrier Schottky rectifier
US2016141412A1 Silicon carbide semiconductor device and method of manufacture thereof
CN105810731A Carborundum semiconductor element and manufacture method for the same
CN105655394A Silicon carbide field effect transistor
TW201618300A Silicon carbide field effect transistor
CN105304708A Silicon carbide semiconductor element
TW201603290A Silicon carbide semiconductor components