| # | Country | Total Patents | |
|---|---|---|---|
| #1 | United States | 6 | |
| #2 | WIPO (World Intellectual Property Organization) | 4 | |
| #3 | China | 3 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Electrical machinery and energy | |
| #3 | Surface technology and coating | |
| #4 | Machine tools | |
| #5 | Machines | |
| #6 | Optics |
| # | Name | Total Patents |
|---|---|---|
| #1 | Shreter Yury Georgievich | 13 |
| #2 | Rebane Yury Toomasovich | 13 |
| #3 | Mironov Aleksey Vladimirovich | 12 |
| #4 | Stepanov Sergey Igorevich | 1 |
| #5 | Lee Stephen Sen-Tien | 1 |
| #6 | Andreev Alexander Nikolaevich | 1 |
| #7 | Gorbunov Ruslan Ivanovich | 1 |
| #8 | Blashenkov Maxim Nikolaevich | 1 |
| #9 | Bougrov Vladislav Evgenievich | 1 |
| #10 | Nikolaev Vladimir | 1 |
| Publication | Filing date | Title |
|---|---|---|
| US2017110853A1 | Semiconductor light-emitting device with an axis of symmetry | |
| CN103703552A | Method of laser separation of the epitaxial film or of the epitaxial film layer from the growth substrate of the epitaxial semiconductor structure (variations) | |
| WO2012115541A2 | Light-emitting nitride semiconductor device comprising substrate having through holes | |
| US2013248500A1 | Method of separating surface layer of semiconductor crystal using a laser beam perpendicular to the separating plane |