EXCICO FRANCE has a total of 51 patent applications. Its first patent ever was published in 2009. It filed its patents most often in EPO (European Patent Office), WIPO (World Intellectual Property Organization) and China. Its main competitors in its focus markets semiconductors, optics and machine tools are MOFFATT STEPHEN, LASERSSEL CO LTD and LASER SYSTEMS & SOLUTIONS OF EUROP.
# | Country | Total Patents | |
---|---|---|---|
#1 | EPO (European Patent Office) | 15 | |
#2 | WIPO (World Intellectual Property Organization) | 9 | |
#3 | China | 7 | |
#4 | Republic of Korea | 7 | |
#5 | Singapore | 5 | |
#6 | Taiwan | 4 | |
#7 | United States | 3 | |
#8 | Japan | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Optics | |
#3 | Machine tools | |
#4 | Environmental technology | |
#5 | Electrical machinery and energy | |
#6 | Medical technology |
# | Name | Total Patents |
---|---|---|
#1 | Godard Bruno | 13 |
#2 | Dutems Cyril | 12 |
#3 | Venturini Julien | 12 |
#4 | Rack Simon | 9 |
#5 | Huet Karim | 8 |
#6 | Besaucele Herve | 6 |
#7 | Bucchia Marc | 6 |
#8 | Shayesteh Maryam | 5 |
#9 | Duffy Ray | 5 |
#10 | Mestres Marc | 4 |
Publication | Filing date | Title |
---|---|---|
EP2899749A1 | Method for forming polycrystalline silicon by laser irradiation | |
EP2712036A1 | A gas circulation loop for a laser gas discharge tube | |
EP2648489A1 | A method for stabilizing a plasma and an improved ionization chamber | |
EP2629321A1 | Method for forming a gettering layer | |
EP2506291A1 | Method and apparatus for forming a straight line projection on a semiconductor substrate | |
EP2364809A1 | Method and apparatus for irradiating a semiconductor material surface by laser energy | |
EP2337066A1 | Method for making a semiconductor device by laser irradiation | |
EP2239084A1 | Method of and apparatus for irradiating a semiconductor material surface by laser energy | |
EP2219231A1 | Method and apparatus for irradiating a photovoltaic material surface by laser energy | |
EP2210696A1 | Method and apparatus for irradiating a semiconductor material surface by laser energy |