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SHENZHEN FOUNDER MICROELECTRONICS CO LTD

Overview
  • Total Patents
    19
  • GoodIP Patent Rank
    86,457
About

SHENZHEN FOUNDER MICROELECTRONICS CO LTD has a total of 19 patent applications. Its first patent ever was published in 2018. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, surface technology and coating and environmental technology are CANON SALES CO INC, OTSUKA MANABU and KUZNETSOV OLEG A.

Patent filings in countries

World map showing SHENZHEN FOUNDER MICROELECTRONICS CO LTDs patent filings in countries
# Country Total Patents
#1 China 19

Patent filings per year

Chart showing SHENZHEN FOUNDER MICROELECTRONICS CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 He Guanzhong 7
#2 Chen Jianguo 5
#3 Li Li 5
#4 Li Ming 4
#5 Luo Jiansheng 4
#6 Liu Guoliang 3
#7 Yao Xuexia 3
#8 Zhao Shengzhe 2
#9 Chen Dingping 2
#10 Diao Yufei 1

Latest patents

Publication Filing date Title
CN111952366A Field effect transistor and preparation method thereof
CN111952360A Field effect transistor and preparation method thereof
CN111952176A Semiconductor structure, enhanced high electron mobility transistor and preparation method thereof
CN111584381A Method for detecting metal layer shedding
CN111554572A Semiconductor device manufacturing method
CN111584357A Deep groove etching method
CN111584353A Silicon carbide wafer thinning method
CN111584480A Semiconductor device and method for manufacturing the same
CN112289676A Method for removing polysilicon residue in semiconductor device manufacturing
CN111192921A Preparation method of silicon carbide insulated gate field effect transistor gate oxide layer
CN111192827A Preparation method of p-GaN cap layer of enhanced high electron mobility transistor
CN111192826A Double-barrier groove epitaxial high-voltage PIN chip and manufacturing method thereof
CN111192829A Groove type VDMOS device and manufacturing method thereof
CN111192916A Novel super-barrier power device and manufacturing method thereof
CN111192833A Silicon carbide wafer and method for producing same
CN111192821A Junction terminal structure of silicon carbide power device, manufacturing method of junction terminal structure and silicon carbide power device
CN111192825A Silicon carbide schottky diode and method for manufacturing same
CN109545670A The preparation method of Schottky contacts and the preparation method of semiconductor devices
CN109616414A The preparation method of wafer processing method and semiconductor devices