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JIANGXI ZHAOCHI SEMICONDUCTOR CO LTD

Overview
  • Total Patents
    14
  • GoodIP Patent Rank
    124,454
About

JIANGXI ZHAOCHI SEMICONDUCTOR CO LTD has a total of 14 patent applications. Its first patent ever was published in 2018. It filed its patents most often in China. Its main competitors in its focus markets semiconductors and surface technology and coating are XIANGNENG HUALEI OPTOELECTRONIC CO LTD, NEXCHIP SEMICONDUCTOR CORP and HC OPTOELECTRONIC (ZHEJIANG) CO LTD.

Patent filings in countries

World map showing JIANGXI ZHAOCHI SEMICONDUCTOR CO LTDs patent filings in countries
# Country Total Patents
#1 China 14

Patent filings per year

Chart showing JIANGXI ZHAOCHI SEMICONDUCTOR CO LTDs patent filings per year from 1900 to 2020

Focus industries

Focus technologies

Top inventors

# Name Total Patents
#1 Gu Wei 10
#2 Wu Liangwen 4
#3 Wen Guosheng 2
#4 Zhong Shengshi 2
#5 Cui Siyuan 2
#6 Wang Xiaoming 2

Latest patents

Publication Filing date Title
CN110635002A Automatic expansion equipment for LED chips
CN110581096A Photoelectric property and appearance integrated detection equipment for LED chip
CN109830585A A kind of light-emitting diode chip for backlight unit with high reflectance electrode
CN109768131A A kind of iii-nitride light emitting devices
CN109768142A A kind of iii-nitride light emitting devices
CN109755359A A kind of manufacturing method of light-emitting diode chip for backlight unit
CN109755364A A kind of novel iii-nitride light emitting devices
CN109755362A A kind of iii-nitride light emitting devices of high-luminous-efficiency
CN109765472A A kind of electroluminescent method for measurement of the LED device of indirect electric contact type
CN109755371A A kind of light-emitting diode encapsulation structure and preparation method thereof
CN109616560A A kind of compound substrate suitable for nitride epitaxial layer growth
CN109616557A A kind of gallium nitride based light emitting diode epitaxial preparation method with tunnel knot
CN110867483A Epitaxial layer structure of GaN-based power semiconductor device on Si substrate and preparation method thereof
CN110660717A Transfer device and transfer method for transferring micro light-emitting diode