CHEN HANHONG has a total of 12 patent applications. Its first patent ever was published in 2009. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, surface technology and coating and electrical machinery and energy are SHENZHEN FOUNDER MICROELECTRONICS CO LTD, CANON SALES CO INC and AHN KIE Y.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 12 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Surface technology and coating | |
#3 | Electrical machinery and energy | |
#4 | Measurement | |
#5 | Machines |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Coating metallic material | |
#3 | Analysing materials | |
#4 | Unspecified technologies | |
#5 | Capacitors and switching devices |
# | Name | Total Patents |
---|---|---|
#1 | Chen Hanhong | 12 |
#2 | Ode Hiroyuki | 6 |
#3 | Kumar Pragati | 6 |
#4 | Malhotra Sandra | 5 |
#5 | Rui Xiangxin | 4 |
#6 | Malhotra Sandra G | 4 |
#7 | Haywood Edward | 4 |
#8 | Deweerd Wim | 3 |
#9 | Shanker Sunil | 2 |
#10 | Haywood Edward L | 2 |
Publication | Filing date | Title |
---|---|---|
US2014080284A1 | High temperature ALD process of metal oxide for DRAM applications | |
US2013330902A1 | Enhanced non-noble electrode layers for DRAM capacitor cell | |
US2013071987A1 | Band gap improvement in DRAM capacitors | |
US2012322220A1 | Method of processing MIM capacitors to reduce leakage current | |
US2012322221A1 | Molybdenum oxide top electrode for DRAM capacitors | |
US2012309162A1 | Method of using a catalytic layer to enhance formation of a capacitor stack | |
US2012214288A1 | Method for producing MIM capacitors with high K dielectric materials and non-noble electrodes | |
US2012156854A1 | Method of forming stacked metal oxide layers | |
US2012123744A1 | System and method for step coverage measurement | |
US2012171839A1 | Fabrication of semiconductor stacks with ruthenium-based materials |