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SHANGHAI WAFER WORKS CORP

Overview
  • Total Patents
    27
  • GoodIP Patent Rank
    166,557
About

SHANGHAI WAFER WORKS CORP has a total of 27 patent applications. Its first patent ever was published in 2011. It filed its patents most often in China. Its main competitors in its focus markets surface technology and coating, machine tools and semiconductors are SICRYSTAL GMBH, SICC CO LTD and SHANGHAI ADVANCED SILICON TECH CO LTD.

Patent filings in countries

World map showing SHANGHAI WAFER WORKS CORPs patent filings in countries
# Country Total Patents
#1 China 27

Patent filings per year

Chart showing SHANGHAI WAFER WORKS CORPs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Jiang Li 6
#2 Huang Chunfeng 5
#3 Haibo Shang 4
#4 Zou Xiaoming 4
#5 Han Jianchao 4
#6 Jianchao Han 4
#7 Chen Jian Gang 4
#8 Liu Susheng 3
#9 Shen Yangyu 3
#10 Lin Tao 3

Latest patents

Publication Filing date Title
CN106670944A Silicon wafer polishing method
CN106757313A It is overweight to mix arsenic crystal bar drawing method
CN106601594A Method for growing poly-crystal on surface of silicon wafer
CN106283177A Block ring, the assembly improving monocrystal silicon radially resistivity evenness and method
CN105291286A Crystal bar cutting method
CN105313000A Chip polishing method
CN105297017A Grinding sheet acid corrosion method
CN105316760A Method for growing polycrystals on backs of silicon wafers
CN105304464A Cleaning process before alkali corrosion of grinded wafer
CN105304482A Silicon wafer corrosion method
CN104741975A Method for grinding silicon chips
CN104742003A Method for polishing single silicon chip
CN104746133A Single crystal furnace heat field
CN104746138A Method for drawing heavily-doped boron silicon single crystal bar
CN103056742A Monocrystalline silicon slice chamfer processing method
CN103510154A Novel single crystal furnace thermal field and novel single crystal furnace thermal field for drawing lightly-doped silicon single crystal rod
CN102343563A Large silicon wafer polishing disk
CN102345160A Novel single crystal furnace thermal field
CN102347233A Method and tray for improving thickness evenness of silicon wafer in process of backlining the silicon wafer
CN102345154A Method and device for improving oxygen content in monocrystalline silicon crystal bar