SICRYSTAL GMBH has a total of 24 patent applications. It increased the IP activity by 250.0%. Its first patent ever was published in 2017. It filed its patents most often in China, EPO (European Patent Office) and United States. Its main competitors in its focus markets surface technology and coating, machine tools and semiconductors are SICC CO LTD, NEOSEMITECH CORP and RES AND DEV CT SHANGHAI INST OF CERAMICS.
# | Country | Total Patents | |
---|---|---|---|
#1 | China | 7 | |
#2 | EPO (European Patent Office) | 7 | |
#3 | United States | 5 | |
#4 | Japan | 3 | |
#5 | WIPO (World Intellectual Property Organization) | 2 |
# | Industry | |
---|---|---|
#1 | Surface technology and coating | |
#2 | Machine tools | |
#3 | Semiconductors | |
#4 | Machines |
# | Name | Total Patents |
---|---|---|
#1 | Vogel Michael | 18 |
#2 | Stockmeier Matthias | 11 |
#3 | Ecker Bernhard | 11 |
#4 | Weber Arnd-Dietrich | 11 |
#5 | Müller Ralf | 8 |
#6 | Schmitt Erwin | 6 |
#7 | Dr Vogel Michael | 4 |
#8 | Dr Stockmeier Matthias | 4 |
#9 | Dr Ecker Bernhard | 4 |
#10 | Dr Weber Arnd-Dietrich | 4 |
Publication | Filing date | Title |
---|---|---|
EP3760766A1 | System for efficient manufacturing of a plurality of high-quality semiconductor single crystals, and method of manufacturing same | |
EP3760765A1 | System for horizontal growth of high-quality semiconductor single crystals, and method of manufacturing same | |
EP3699328A1 | Manufacturing method for sic-volume single crystal and growth assembly for same | |
EP3567138A1 | Chamfered silicon carbide substrate and method of chamfering | |
EP3567139A1 | Chamfered silicon carbide substrate and method of chamfering | |
EP3382068A1 | Silicon carbide substrate and method of growing sic single crystal boules | |
EP3382067A1 | Silicon carbide substrate and method of growing sic single crystal boules |