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KR20110095599A
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The apparatus against deforming the quartz crucible in the single crystal growth
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KR20110095780A
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Graphite crucible of a new form for large caliber gaas single crystal
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KR20110095782A
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Temperature control device in a fixed device of large caliber gaas single crystal growth
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KR20110095584A
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The adjust equipment on the unit of automatic diameter control
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KR20110095774A
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The methed of automatic diameter control in the large caliber gaas single crystal growth
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KR20110095779A
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Heat reflector for large caliber gaas single crystal increased yield
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KR20110095452A
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Preventive method for wipeout in polishing with 4 inch gaas wafers
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KR20110095775A
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Crystal growing apparatus for increasing large caliber gaas ingle crystal yield
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KR20110095434A
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Synthesis method of silicon carbide powder for single crystal growth
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KR20110095777A
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The dust line cap equipment for growing germanium single crystal
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KR20110095476A
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Seed production method for 4 inch gaas ingot growing by wire saw
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KR20110095433A
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A control system of real-time growth rate by weight measurement method for high quality silicon carbide single crystal
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KR20110095501A
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Sapphire raw material cost down, process time save system
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KR20110095754A
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The methed of poly crystal control for increasing large caliber gaas single crystal yield
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KR20110095578A
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The seed chuck against the drop of the large caliber sapphire ingot
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KR20110095677A
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Ar gas flowing control system through changing the structural ar gas exhaust line
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KR20110095458A
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Method of removing the backlash in double side polishing for 4 inch gaas wafers
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KR20110095778A
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Electric resistance heating element and electrode bonding device of large caliber gaas single crystal growth
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KR20110095576A
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Strength measurement device of seed
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KR20110095467A
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Germanium wafer polishing processes that occur on how to prevent wipeout
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