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HEBEI TONGGUANG CRYSTAL CO LTD

Overview
  • Total Patents
    29
  • GoodIP Patent Rank
    74,362
  • Filing trend
    ⇩ 75.0%
About

HEBEI TONGGUANG CRYSTAL CO LTD has a total of 29 patent applications. It decreased the IP activity by 75.0%. Its first patent ever was published in 2013. It filed its patents most often in China. Its main competitors in its focus markets surface technology and coating, materials and metallurgy and measurement are TANKEBLUE SEMICONDUCTOR CO LTD, INST FIZ I AN ARMSSR and HARBIN AURORA OPTOELECTRONICS TECHNOLOGY CO LTD.

Patent filings in countries

World map showing HEBEI TONGGUANG CRYSTAL CO LTDs patent filings in countries
# Country Total Patents
#1 China 29

Patent filings per year

Chart showing HEBEI TONGGUANG CRYSTAL CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Gao Yu 22
#2 Yang Kun 18
#3 Zheng Qingchao 16
#4 Zhao Meiyu 10
#5 Tao Ying 9
#6 Deng Shujun 9
#7 Duan Cong 9
#8 Yang Jisheng 7
#9 Niu Xiaolong 6
#10 Liu Xinhui 5

Latest patents

Publication Filing date Title
CN108046267A A kind of system and method for synthesizing high-purity alpha-SiC powder
CN107955969A A kind of SiC single crystal growing system being persistently fed
CN108118389A A kind of preparation method of the seed crystal of high-quality silicon carbide monocrystalline
CN107976410A A kind of method for identifying industrialization body block SiC single crystal crystal form
CN108118394A A kind of method of nitrogen impurity content in reduction single-crystal silicon carbide
CN106757355A A kind of growing method of gemstones formed of silicon carbide
CN106591952A Preparation method of SiC wafer
CN106637418A Heat treatment method for SiC gemstone
CN106757321A A kind of seed crystal processing method for silicon carbide monocrystal growth
CN106757356A The connection method of seed crystal and graphite support in a kind of SiC single crystal growth course
CN106480504A A kind of furnace rear method for annealing reducing great diameter SiC monocrystal internal stress
CN106435734A Seed crystal treatment method for growing low-defect silicon carbide (SiC) single crystals
CN106480503A A kind of growing method of granular carbonization silicon single crystal
CN106544724A A kind of preparation method of the graphite plate coating in silicon carbide monocrystal growth thermal field structure
CN106747665A A kind of preparation method of the graphite plate coating in silicon carbide monocrystal growth thermal field structure
CN106435735A Method for optimizing growth of silicon carbide single crystals
CN106245110A A kind of reduce SiC crystal growth in defect produce method
CN106435732A Method for rapidly preparing large-size SiC monocrystal crystal bar
CN104470017A Induction heating coil device
CN104550133A Method for removing organic pollutants in hollow micro-defect and on surface of wafer of silicon carbide single crystal