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CN1632921A
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Two-step reduction etching technique capable of reducing grid characteristic dimension
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CN1632938A
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Shallow grooved-isolation technique without hard mask
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CN1632942A
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Technique for porous filling damascene using light sensitive material
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CN1632922A
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Novel ultra-thin nitrogen-contained grid medium preparing method
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CN1632939A
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A shallow groove isolation technique in integrated circuit manufacturing technique
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CN1632930A
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Plasma processing technique for reducing MOCVD TiN film thickness on through-hole side wall
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CN1632931A
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Technique for improving voltage resistance of reduced surface field type LDMOS device
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CN1632927A
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Plasma etching method for eliminating organic substance using sulfur dioxide mixture gas
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CN1632941A
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Method for forming etching barrier layer in dual damascene structure
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CN1604277A
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Method for eliminating transverse concave groove with nitrogen
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CN1604317A
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Tungsten plugged barrier layer deposition process and structure thereof
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CN1604301A
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Chemical-mechanical polishing process for shadow trench isolation technology
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CN1632937A
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Shallow junction shield groove technique for protecting active region area
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CN1604287A
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Preparation of etching obstructing layer by rotary coating method in double Damascus structure
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CN1603470A
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Metal front contact hole cleaning process
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CN1547251A
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A method for reducing dimension differences between isolated contact aperture and dense contact aperture
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CN1547244A
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Process for eliminating photoresist poison of photo-etching in integrated circuit manufacture technology
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CN1547254A
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Process for forming silicide at twice in active area of transistor
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CN1547255A
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Technique integration method for deep sub-micron CMOS source-drain manufacture technology
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CN1547245A
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Preprocessing technique for removing oxide film from surface of copper seed crystal and reinforcing copper layer adhesion
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