Learn more

Kunshan huatai electronic technology co ltd

Overview
  • Total Patents
    14
  • GoodIP Patent Rank
    203,212
About

Kunshan huatai electronic technology co ltd has a total of 14 patent applications. Its first patent ever was published in 2011. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are SUZHOU JIEXINWEI SEMICONDUCTOR TECHNOLOGY CO LTD, TU KUO-CHI and BADEHI PIERRE.

Patent filings in countries

World map showing Kunshan huatai electronic technology co ltds patent filings in countries
# Country Total Patents
#1 China 14

Patent filings per year

Chart showing Kunshan huatai electronic technology co ltds patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Zhang Yaohui 8
#2 Zeng Dajie 7
#3 Ting Yu 6
#4 Yaohui Zhang 6
#5 Dajie Zeng 5
#6 Yibing Zhao 5
#7 Yu Ting 4
#8 Zhao Yibing 4
#9 Yin Lijuan 2
#10 Peng Hu 1

Latest patents

Publication Filing date Title
CN104218029A Internal matching structure for power transistor
CN104270099A Internal matching structure for controlling harmonic impedance for power transistor
CN104183632A RF-LDMOS (radio frequency laterally diffused metal oxide semiconductor) self-alignment drain terminal field plate structure and fabrication method thereof
CN104078369A Low-cost high-power electronic device packaging technology
CN102882477A Radio-frequency power device with adjustable operating frequency
CN102760771A Novel grid structure for RF-LDMOS (Radio Frequency-Laterally Diffused Metal Oxide Semiconductor) device
CN102790090A LDMOS device based on high K material
CN102790088A Breakdown voltage-adjustable RF-LDMOS device
CN102820286A Structure for improving performance of passive device of power integrated circuit
CN102361035A Structure of RF-LDMOS (radio frequency laterally double-diffused metal oxide semiconductor) device without epitaxial layer
CN102394574A Wideband power amplifier based on RF-LDMOS (radio frequency-lateral diffusion metal oxide semiconductor)
CN102315164A Method for improving performance of RF-LDMOS (Radio Frequency-Laterally Diffused Metal Oxide Semiconductor) device and integrated circuit thereof
CN102184911A Miller parasitic capacitance shielding structure of high-power and high-frequency device
CN102184863A RFLDMOS (Radio Frequency Laterally Diffused Metal Oxide Semiconductor) based on self-aligned silicide and tungsten plug structure and manufacturing method thereof