|
CN104499057A
|
|
View window device for infrared pyrometer
|
|
CN104498901A
|
|
Method and device for plating silicon carbide single crystal
|
|
CN104505402A
|
|
Indium nitride channel layer gallium nitride-based high-electron-mobility transistor structure
|
|
CN104505400A
|
|
InxAl1-xN/AlN composite barrier layer gallium nitride hetero junction transistor structure with high electron mobility
|
|
CN103643295A
|
|
Method for preparing raw material for vapor-method aluminum nitride crystal growth
|
|
CN103643305A
|
|
Preparation method of TaC crucible for high-temperature gas phase method crystal growth
|
|
CN103555207A
|
|
Grinding liquid for grinding and polishing
|
|
CN103541016A
|
|
Novel doping process and equipment for growth of n type low resistance gallium arsenide single crystal
|
|
CN103708463A
|
|
Preparation method of kilogram-grade high-purity silicon carbide powder
|
|
CN103526279A
|
|
Sleeve type graphite heater used for GaAs (gallium arsenide) crystal growth
|
|
CN102586858A
|
|
Double-crucible device for growing single crystals through induction heating physical vapor phase transfer
|
|
CN102581974A
|
|
Crystal cutting, positioning and bonding platform
|
|
CN102615721A
|
|
Orientation material table for processing crystal inclination angle
|
|
CN102605421A
|
|
Furnace monocrystal isothermal annealing method and tool
|
|
CN102581762A
|
|
Crystal processing surface grinding platform
|
|
CN102045903A
|
|
Method for protecting induction heating coil by utilizing water flow relay
|
|
CN102021653A
|
|
Method for growing silicon carbide single crystal by using high-density material block
|
|
CN102021661A
|
|
Seed crystal bonding device
|
|
CN102123533A
|
|
Method for protecting induction heating coil by using water temperature relay
|
