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SCHULZE HANS-JOACHIM

Overview
  • Total Patents
    30
About

SCHULZE HANS-JOACHIM has a total of 30 patent applications. Its first patent ever was published in 2008. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, machines and basic communication technologies are KO CHIH-HSIN, 3 5 POWER ELECTRONICS GMBH and EPISIL TECHNOLOGIES INC.

Patent filings in countries

World map showing SCHULZE HANS-JOACHIMs patent filings in countries
# Country Total Patents
#1 United States 30

Patent filings per year

Chart showing SCHULZE HANS-JOACHIMs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Schulze Hans-Joachim 30
#2 Mauder Anton 8
#3 Niedernostheide Franz-Josef 6
#4 Hirler Franz 4
#5 Pfirsch Frank 4
#6 Strack Helmut 4
#7 Rodriguez Francisco Javier Santos 2
#8 Timme Hans-Joerg 2
#9 Barthelmess Reiner 2
#10 Baumgartl Johannes 2

Latest patents

Publication Filing date Title
US2014042595A1 Method of manufacturing a semiconductor device including grinding from a back surface and semiconductor device
US2014027812A1 Semiconductor device including a dielectric structure in a trench
US2014021590A1 Method of manufacturing semiconductor devices using ion implantation
US8587025B1 Method for forming laterally varying doping concentrations and a semiconductor device
US2014001514A1 Semiconductor Device and Method for Producing a Doped Semiconductor Layer
US2014001547A1 Semiconductor device including an edge area and method of manufacturing a semiconductor device
US2013307127A1 Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device
US2013240902A1 Semiconductor arrangement
US2013140616A1 Integrated circuit including a power transistor and an auxiliary transistor
US2013065379A1 Method for manufacturing a semiconductor device
US2013001674A1 Semiconductor device with voltage compensation structure
US2012261673A1 SiC semiconductor power device
US2012256250A1 Power transistor device vertical integration
US2010155879A1 Semiconductor device with staggered oxide-filled trenches at edge region
US2011101501A1 Semiconductor device including semiconductor zones and manufacturing method
US2011101416A1 Bipolar semiconductor device and manufacturing method
US2010258840A1 Insulated gate bipolar transistor
US2010127304A1 Bipolar semiconductor device and manufacturing method
US2010078765A1 Robust semiconductor device with an emitter zone and a field stop zone
US2009283866A1 High-ohmic semiconductor substrate and a method of manufacturing the same