|
CN109243973A
|
|
A kind of method of etching silicon carbide
|
|
CN109411546A
|
|
SiC groove MOS device and preparation method thereof
|
|
CN109309127A
|
|
A kind of silicon carbide MOSFET device and preparation method thereof
|
|
CN109411343A
|
|
A kind of SiC MOSFET gate oxide method for annealing
|
|
CN109461648A
|
|
A kind of silicon carbide device manufacturing method
|
|
CN109461768A
|
|
A kind of SiC junction barrel Schottky diode and its manufacturing method
|
|
CN109411342A
|
|
A kind of silicon carbide groove etching method
|
|
CN109461646A
|
|
A kind of SiC MOSFET gate oxide method for annealing
|
|
CN109449085A
|
|
A kind of 4H-SiC Schottky diode and preparation method thereof that Surge handling capability is enhanced
|
|
CN109461654A
|
|
A kind of SiC Schottky diode and preparation method thereof of no injection type termination end structure
|
|
CN108321213A
|
|
The preparation method and its structure of SiC power diode devices
|
|
CN108321080A
|
|
The preparation method and its structure of the SiC MOSFET elements of high reliability
|
|
CN108257856A
|
|
The preparation method and its structure of the SiC MOSFET power devices of high temperature resistant low-power consumption
|
|
CN108321212A
|
|
The preparation method and its structure of SiC Schottky diode
|
