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SUZHOU NENGWU ELECTRONIC TECH CO LTD

Overview
  • Total Patents
    14
  • GoodIP Patent Rank
    124,750
  • Filing trend
    ⇩ 50.0%
About

SUZHOU NENGWU ELECTRONIC TECH CO LTD has a total of 14 patent applications. It decreased the IP activity by 50.0%. Its first patent ever was published in 2015. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are KRASNOD OTDEL S O PROIZV VNII, APD SEMICONDUCTOR INC and KWON HEUNG-KYU.

Patent filings in countries

World map showing SUZHOU NENGWU ELECTRONIC TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 14

Patent filings per year

Chart showing SUZHOU NENGWU ELECTRONIC TECH CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Zhang Baoshun 14
#2 Yu Guohao 12
#3 Fu Kai 11
#4 Cai Yong 11
#5 Song Liang 10
#6 Sun Shichuang 10
#7 Zhang Zhili 10
#8 Li Weiyi 5
#9 Qin Shuangjiao 2
#10 Pan Gebo 2

Latest patents

Publication Filing date Title
CN112242391A Improved HEMT device and manufacturing method thereof
CN108962752A Enhanced HEMT device of p-type grid and preparation method thereof
CN106981513A III group-III nitride polarization superjunction HEMT device and its preparation method based on high resistant cap
CN108735795A (0001)The hexagonal phase SiC wafers of face extension, UMOSFET devices and preparation method thereof
CN106328701A III-nitride HEMT device based on double-cap-layer structure and manufacturing method of device
CN105870013A Method for realizing enhanced HEMT (High Electron Mobility Transistor) by virtue of p-type passivation and enhanced HEMT
CN105810607A Method and system for realizing P-type nitride enhanced HEMT (High Electron Mobility Transistor) through in-situ etching monitoring
CN105870012A Method and system for fabricating recessed gate enhanced high electron mobility transistor (HEMT) device by in-situ etching monitoring
CN105810615A Method and system for monitoring in-situ etching of etching sample by employing crystal oscillator
CN106549049A A kind of method that electrochemical etching p-type nitride realizes enhancement mode HEMT
CN106548939A The system and method for recessed grid enhancement mode HEMT device is realized by light auxiliary etch self-stopping technology
CN106158627A The method and system of enhancement mode HEMT device are realized by electrochemical corrosion
CN106158693A Etching self-stopping technology realizes the system and method for recessed grid enhancement mode HEMT device
CN106158947A III group-III nitride enhancement mode MIS-HEMT device and preparation method thereof