Process for the purification of a monocrystalline SiC substrate and SiC substrate
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A method of producing a vanadium-doped SiC bulk single crystal and a vanadium-doped SiC substrate
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Production method for a SiC volume single crystal with inhomogeneous lattice plane course and monocrystalline SiC substrate with inhomogeneous lattice plane course
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Production method for a SiC bulk single crystal with homogeneous lattice plane course
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Physical vapor transport growth system for simultaneously growing more than one SiC single crystal, and method of growing
DE102010029755A1
Producing silicon carbide volume single crystal, useful for producing semiconductor device, comprises e.g. producing silicon carbide growth gas phase in crystal growth region of crucible, and growing silicon carbide volume single crystal
DE102010029756A1
A production method for a large-facet SiC bulk single crystal and single-crystal SiC substrate with homogeneous resistance distribution
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Production method of SiC bulk single crystal by a thermal treatment and low-resistance SiC single-crystal substrate
DE102009016133A1
Production method for an oxygen-poor AlN bulk single crystal
DE102009016132A1
A method for producing a long volume single crystal of SiC or AlN and long volume single crystal of SiC or AlN
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Producing volume single crystal, comprises disposing seed crystal in crystal growth region of growth crucible with initial growth surface and center central longitudinal axis, and growing the single crystal by deposition onto seed crystal
DE102009016131A1
Production method of a SiC bulk single crystal by means of a gas barrier and low-dislocation monocrystalline SiC substrate
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A low-AlN bulk single-crystal, low-dislocation AlN substrate production process
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Producing a silicon carbide volume single crystal, comprises producing silicon carbide growth gas phase in crystal growing area of culture crucible and growing-off the silicon carbide volume single crystal from the gas phase by deposition
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Thermally isolated assembly and method of making a SiC bulk single crystal
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Preparation method for uniformly doped SiC bulk single crystal and uniformly doped SiC substrate
DE102008063129A1
Production method for a co-doped SiC bulk single crystal and high-resistance SiC substrate
DE102008063130A1
Method for investigating the foreign phase of a monocrystalline substrate
DE102008049175B3
Process for the treatment of a SiC surface
DE102005049932A1
Growth of silicon carbide-germanium-volume mixed crystals, comprises producing silicon-, carbon- and germanium gas phase from two source materials containing silicon, carbon and germanium by sublimation and evaporation
