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FUKUDA CRYSTAL LAB

Overview
  • Total Patents
    31
  • GoodIP Patent Rank
    208,526
About

FUKUDA CRYSTAL LAB has a total of 31 patent applications. Its first patent ever was published in 2004. It filed its patents most often in Japan, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets surface technology and coating, semiconductors and measurement are NEOSEMITECH CORP, DK AZTEC CO LTD and RAYTON SOLAR INC.

Patent filings per year

Chart showing FUKUDA CRYSTAL LABs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Fukuda Tsuguo 23
#2 Sato Hiroki 10
#3 Yoshikawa Akira 6
#4 Mikawa Yutaka 5
#5 Fukutomi Keiji 5
#6 Suzuki Takao 5
#7 Itoh Hirohisa 4
#8 Satonaga Tomohiko 3
#9 Koike Hikaru 3
#10 Kikuyama Hirohisa 3

Latest patents

Publication Filing date Title
JP2016028831A METHOD AND APPARATUS FOR GROWING Fe-Ga-BASED ALLOY SINGLE CRYSTAL
JP2015048296A Growth unit and growth method of single crystal
JP2013212969A Method for producing zinc oxide crystal, zinc oxide crystal, scintillator material and scintillator detector
JP2011088805A Method for recovering silicon, and method for producing silicon for solar cell
JP2011137738A Multipoint temperature measuring device
JP2011137737A Wireless measurement device and wireless temperature measurement system
JP2010053017A Zinc oxide single crystal and method for producing the same
JP2010083686A Silicon polycrystal and producing method of the same
JP2010059031A Aluminum oxide single crystal and method for manufacturing the same
JP2010059030A Garnet single crystal substrate and method for manufacturing the same
JP2010024071A Piezoelectric single crystal and method for manufacturing the same
JP2009286856A Scintillator material, method for manufacturing the same, and ionizing radiation detector
JP2009250843A Piezoelectric vibrator, temperature sensor, and temperature measurement method
JP2008239351A Method for manufacturing oxide crystal, oxide crystal, scintillator, inspecting unit and inspecting device
JP2008239352A Single crystal manufacturing device and manufacturing method
US2008081013A1 Gallate single crystal, process for producing the same, piezoelectric device for high-temperature use and piezoelectric sensor for high-temperature use
EP1666920A1 Scintillator and radiation detector, and radiation inspecting device