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BAOTOU MEIKE SILICON ENERGY CO LTD

Overview
  • Total Patents
    23
  • GoodIP Patent Rank
    69,606
About

BAOTOU MEIKE SILICON ENERGY CO LTD has a total of 23 patent applications. Its first patent ever was published in 2018. It filed its patents most often in China. Its main competitors in its focus markets surface technology and coating, semiconductors and chemical engineering are NEOSEMITECH CORP, NANJING CRYSTAL GROWTH & ENERGY EQUIPMENT CO LTD and DK AZTEC CO LTD.

Patent filings in countries

World map showing BAOTOU MEIKE SILICON ENERGY CO LTDs patent filings in countries
# Country Total Patents
#1 China 23

Patent filings per year

Chart showing BAOTOU MEIKE SILICON ENERGY CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Wang Yicheng 9
#2 Ma Xinxing 8
#3 Meng Tao 7
#4 Wang Haiqing 7
#5 Lu Jinggang 6
#6 Yao Liang 5
#7 Huang Zhenhua 4
#8 Zhang Zhiqiang 4
#9 Zhang Zexing 3
#10 Gao Libing 3

Latest patents

Publication Filing date Title
CN111663177A Gallium metal adding method of gallium-doped monocrystalline silicon and gallium metal placing structural body
CN111850680A Reactor for preparing gallium-silicon dopant and use method thereof
CN111477560A Rapid detection method for distinguishing gallium-boron-doped single crystal silicon rods for solar cell
CN111424314A Gallium-silicon alloy manufacturing furnace for gallium-doped monocrystalline silicon and manufacturing method thereof
CN111424313A Method for preparing gallium-doped monocrystalline silicon by RCZ (controlled-temperature zone) method
CN111321460A Method for preparing large-size low-oxygen silicon single crystal by RCZ (controlled-temperature zone) method
CN111368434A Prediction method of Czochralski method monocrystalline silicon solid-liquid interface based on ANN
CN110923805A Method for prolonging service life of quartz crucible for RCZ
CN110983428A Method for prolonging service life of crucible for solar-grade large-size single crystal growth
CN110923810A Device and process for regulating and controlling liquid level position in equal-diameter growth process of large-size monocrystalline silicon
CN110578167A Charging method for protecting crucible side wall coating
CN110670130A Novel lateral heater suitable for polycrystalline ingot casting
CN110438559A A kind of single crystal growing furnace reducing guide shell
CN110453277A A kind of Czochralski method mono-crystal furnace thermal field quickly cooling device and cooling means
CN110016715A A kind of preparation method of polycrystalline cast ingot crucible coating layer
CN109436524A A kind of G6, G7, G8 polycrystal silicon ingot is universal to turn over ingot device and its fixing means
CN109585275A A method of guaranteeing polysilicon chip or class monocrystalline silicon piece quality stability
CN109385665A A kind of crucible preparation method that suitable casting single crystal uses
CN109252214A A method of improving polycrystalline silicon ingot or purifying furnace furnace atmosphere cleanliness
CN109097822A A kind of carbon content method reduced in monocrystalline crystal bar