| # | Country | Total Patents | |
|---|---|---|---|
| #1 | China | 2 | |
| #2 | Norway | 2 | |
| #3 | Russian Federation | 2 | |
| #4 | Australia | 1 | |
| #5 | Canada | 1 | |
| #6 | Taiwan | 1 | |
| #7 | United States | 1 | |
| #8 | WIPO (World Intellectual Property Organization) | 1 |
| # | Industry | |
|---|---|---|
| #1 | Surface technology and coating | |
| #2 | Semiconductors | |
| #3 | Environmental technology |
| # | Technology | |
|---|---|---|
| #1 | Single-crystal-growth | |
| #2 | Semiconductor devices | |
| #3 | Reduction of greenhouse gas emissions |
| # | Name | Total Patents |
|---|---|---|
| #1 | Kimura Yoshimichi | 7 |
| #2 | Sakai Yuichi | 5 |
| #3 | Tsuchiya Masato | 2 |
| #4 | Kimura Esimiti | 2 |
| #5 | Mashimo Ikuo | 2 |
| #6 | Yoshimichi Kimura | 2 |
| #7 | Ikuo Mashimo | 1 |
| #8 | Tsutija Masato | 1 |
| #9 | Sakai Juiti | 1 |
| #10 | Yuichi Sakai | 1 |
| Publication | Filing date | Title |
|---|---|---|
| WO2006059632A1 | Process for producing polycrystalline silicon ingot | |
| CN101019212A | Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution |