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MOS ELECTRONICS TAIWAN INC

Overview
  • Total Patents
    144
About

MOS ELECTRONICS TAIWAN INC has a total of 144 patent applications. Its first patent ever was published in 1992. It filed its patents most often in Taiwan. Its main competitors in its focus markets semiconductors, computer technology and environmental technology are MOULI CHANDRA, WALKER ANDREW J and LUNG HSIANG-LAN.

Patent filings in countries

World map showing MOS ELECTRONICS TAIWAN INCs patent filings in countries
# Country Total Patents
#1 Taiwan 144

Patent filings per year

Chart showing MOS ELECTRONICS TAIWAN INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Wang Jyh-Shyan 16
#2 Chen Min-Liang 14
#3 Jang Dong-Long 14
#4 Shiah Liang-Jiuh 11
#5 Luoh Yeong-Tsuen 10
#6 Ni Cherng-Tsong 9
#7 Twu Yuh-Tarng 9
#8 Jou Chorng-Shiun 8
#9 Sonq Gwo-Donq 7
#10 Chen Guang-Jau 6

Latest patents

Publication Filing date Title
TW383450B Shallow trench isolation forming method in the integrated circuit
TW345721B Method for improving polysilicon interconnect between split gates of flash memory
TW337617B Method for increasing the resistance of a polysilicon
TW336345B Nitride cap amorphous silicon spacer local oxidation
TW336346B Double interface sealing local oxidation of silicon (LOCOS)
TW347580B Process for forming a gate
TW344868B Process for using silicate glass as silicon integrated circuit doping
TW380254B SRAM with low load current
TW344114B Process for increasing the charge storage capacity of roughened capacitive electrode
TW344878B IC unloader
TW330305B Disposable photo-resist coated cap
TW335528B A multi die tray composition mechanism
TW383232B Automatic exhausting apparatus for photoresist bottle
TW327695B The process for increasing surface area and electricity of rugged capacitor
TW332918B The glue implement for sticking test of IC
TW340246B Vacuuming pipe structure of wafer placement seat
TW335532B An isolation method for memory cell and periphery circuit substrate
TW347552B Method for storing nitrogen closet with low moisture and high vacuum
TW357408B Manufacturing process avoiding field inversion in field oxide area
TW332318B Method of forming high voltage transistor