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FREIBERGER COMPOUND MAT GMBH

Overview
  • Total Patents
    195
  • GoodIP Patent Rank
    44,618
  • Filing trend
    ⇩ 60.0%
About

FREIBERGER COMPOUND MAT GMBH has a total of 195 patent applications. It decreased the IP activity by 60.0%. Its first patent ever was published in 1999. It filed its patents most often in EPO (European Patent Office), United States and China. Its main competitors in its focus markets machines, surface technology and coating and semiconductors are SILTRONIC JAPAN CORP, SIXPOINT MATERIALS INC and MEMC ELECTRONICS MATERIALS INC.

Patent filings per year

Chart showing FREIBERGER COMPOUND MAT GMBHs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Eichler Stefan 67
#2 Habel Frank 59
#3 Weinert Berndt 43
#4 Hammer Ralf 39
#5 Leibiger Gunnar 35
#6 Gruszynsky Ralf 30
#7 Kleinwechter Andre 29
#8 Scholz Ferdinand 28
#9 Flade Tilo 26
#10 Scheffer-Czygan Max 18

Latest patents

Publication Filing date Title
US2020232117A1 Growth of a-b crystals without crystal lattice curvature
DE102019208389A1 Process for the production of residual stress and dislocation-free AIII-BV substrate wafers
DE102016210451A1 Method and apparatus for Ga recovery
DE102015205104A1 Cultivation of A-B crystals without crystal lattice curvature
JP2015078122A Doped gallium arsenide single crystal having low optical absorption coefficient
US2014151716A1 Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
DE102013113030A1 Method for edge rounding of semiconductor wafers
JP2013141023A Iii-n substrate and iii-n template
CN106968014A Method and III N monocrystalline for preparing III N monocrystalline
JP2013116851A Doped iii-n bulk crystal, and self-support doped iii-n substrate
DE102013002637A1 A method of making a gallium arsenide substrate, gallium arsenide substrate and use thereof
US2013320242A1 Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
DE102012204553A1 Preparing template, comprises growing crystalline III-N-material on substrate, and depositing intermediate layer on substrate as mask material or in crystalline III-N material, where intermediate layer includes III-N-nucleation layer
DE102012204551A1 Preparing template comprising substrate and crystal layer made of e.g. aluminum nitride, comprises e.g. performing crystal growth of material on substrate at crystal growth temperature, changing to second temperature and continuing growth
DE102011089501A1 Apparatus and method for vaporizing material from a molten metal
JP2011020261A Wire saw and wire sawing method
DE102010011895A1 Process for the preparation of a group III nitride semipolar crystal, substrate, free-standing semipolar substrate and use of the substrates
US2009130781A1 Method for simulatenously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
DE102008032628A1 Preparation of doped gallium arsenide single crystal, useful to produce gallium arsenide substrate wafer, comprises melting gallium arsenide starting material and subsequently making the gallium arsenide melts
WO2008101626A1 Method for producing (al, ga)inn crystals