CBL TECHNOLOGIES INC has a total of 39 patent applications. Its first patent ever was published in 1998. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and Taiwan. Its main competitors in its focus markets surface technology and coating, semiconductors and machines are TECHNOLOGIES AND DEVICES INTER, FURUKAWA COMPANY LTD and MITSUBISHI MATERIAL SILICON.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 13 | |
#2 | WIPO (World Intellectual Property Organization) | 11 | |
#3 | Taiwan | 7 | |
#4 | China | 6 | |
#5 | EPO (European Patent Office) | 2 |
# | Industry | |
---|---|---|
#1 | Surface technology and coating | |
#2 | Semiconductors | |
#3 | Machines | |
#4 | Chemical engineering | |
#5 | Environmental technology |
# | Technology | |
---|---|---|
#1 | Single-crystal-growth | |
#2 | Semiconductor devices | |
#3 | Coating metallic material | |
#4 | Unspecified technologies | |
#5 | Separation | |
#6 | Unspecified technologies | |
#7 | Storage of greenhouse gases |
# | Name | Total Patents |
---|---|---|
#1 | Solomon Glenn S | 35 |
#2 | Miller David J | 34 |
#3 | Ueda Tetsuzo | 31 |
#4 | Solomon Glenn | 2 |
#5 | Miller David | 2 |
#6 | Solomon Gleen S | 2 |
#7 | Miller Daivd J | 1 |
Publication | Filing date | Title |
---|---|---|
WO2011119195A2 | Modern hydride vapor-phase epitaxy system & methods | |
TW200410322A | Free standing substrates by laser-induced decoherency and regrowth | |
US6498113B1 | Free standing substrates by laser-induced decoherency and regrowth | |
CN1350603A | Sequential hydride vapor-phase epitaxy | |
WO0068470A1 | Magnesium-doped iii-v nitrides & methods | |
US6569765B1 | Hybrid deposition system and methods | |
US6176925B1 | Detached and inverted epitaxial regrowth & methods | |
US6159287A | Truncated susceptor for vapor-phase deposition | |
US6117213A | Particle trap apparatus and methods | |
US6179913B1 | Compound gas injection system and methods | |
US6190629B1 | Organic acid scrubber and methods | |
US6566256B1 | Dual process semiconductor heterostructures and methods | |
US6146457A | Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |