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LUMISTAL CO LTD

Overview
  • Total Patents
    34
  • GoodIP Patent Rank
    65,095
  • Filing trend
    ⇩ 66.0%
About

LUMISTAL CO LTD has a total of 34 patent applications. It decreased the IP activity by 66.0%. Its first patent ever was published in 2010. It filed its patents most often in Republic of Korea, China and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, surface technology and coating and chemical engineering are NAKAZAWA HARUO, EPITOP PHOTOELECTRIC TECHNOLOGY CO LTD and EPITOP OPTOELECTRONIC CO LTD.

Patent filings in countries

World map showing LUMISTAL CO LTDs patent filings in countries

Patent filings per year

Chart showing LUMISTAL CO LTDs patent filings per year from 1900 to 2020

Focus technologies

Top inventors

# Name Total Patents
#1 Lee Hyun Jae 17
#2 Han Jai Yong 14
#3 Choi Dae Woo 3
#4 Lee Hyun-Jae 2
#5 Lee Dong Heon 1
#6 Won Young Jong 1
#7 Cho Ha Na 1
#8 Ahn Seung Eon 1
#9 Sin Dong Jun 1
#10 Kim Kyoung Kook 1

Latest patents

Publication Filing date Title
KR20200125073A A Hydride Vapor Phase Epitaxy Apparatus for Manufacturing a GaN Wafer and a Method for Manufacturing the Same
KR101967716B1 MANUFACTURING METHOD FOR GaN WAFER
WO2017179868A1 Method for manufacturing nitride semiconductor substrate including semi-insulating nitride semiconductor layer, and nitride semiconductor substrate manufactured thereby
KR101889001B1 Method for manufacturing Nitride Semiconductor Substrate having Semi-insulating Layer and Nitride Semiconductor Substrate
KR20180077433A Nitride Semiconductor Device and Method for manufacturing thereof
KR20180070076A Vertical Type Nitride Semiconductor Device and Method for manufacturing thereof
KR20180063576A Nitride Semiconductor Device having Semi-insulating Layer and Method for manufacturing thereof
KR20180060426A Nitride Semiconductor Device having Semi-insulating Layer and Method for manufacturing thereof
KR20180057125A Nitride Semiconductor Substrate having Semi-insulating Layer and Method for manufacturing thereof
KR20170126233A Manufacturing apparatus for the thick film structure of Nitride semiconductor substrate and method thereof
KR20170120354A Manufacturing method for the thick film structure of Nitride semiconductor substrate
KR20170118472A Method for removing processing defect of gallium nitride substrate
KR20170116881A Nitride semiconductor substrate having a plurality voids and method formanufacturing the same
KR101668237B1 Surface polishing method of nitride semiconductor wafers
KR20170033118A Method of manufacturing nitride semiconductor substrates for control bowing by using polishing technique of nitride semiconductor substrates
KR101699794B1 A Method of Manufacturing No Bending GaN Wafer, and A Wafer therefore
KR20160136581A Method ofmanufacturing nitride semiconductor substrates by using cleavage property of material
KR20160063796A Method of GaN wafer manufacturing for minimization of wafer bowing and cracking
KR20160000686A Method for the growth of nitride semiconductor crystal with voids and Method for the manufacturing of nitride semiconductor substrate thereof
KR101536767B1 Method of defect selective covering on the surface of semiconductor substrate